In this study, we attempted to install CeO
2 /Y
2 O
3 /CeO
2 buffer layers, where the thicknesses of the CeO
2 and Y
2O
3 are10 and 250 nm respectively, instead of the CeO
2/YSZ (Y
2O
3 stabilized ZrO
2)/CeO
2 buffer layer architecture for YBCO (YBa
2 Cu
3 O
7 ) coated conductors using Ni-electroplated {100}<001> textured Cu and SUS316 laminated tape. Since the diffusion coefficient of oxygen in Y
2O
3 is much smaller than that in YSZ and CeO
2, Y
2O
3 seems to be a more favorable buffer layer material. We obtained a
Jc of 1.0 MA/cm
2 for the YBCO/Y
2 O
3/Ni-electroplated Cu/SUS 316 laminated tape. However, the Δφvalue of the Y
2O
3 layer deposited on the Ni layer increased by 1°compared with that of the Ni layer, and the Δφvalue of the YBCO layer on the Y
2O
3 layer increased by 1.5°compared with that of the Y
2O
3 layer. To avoid the degradation of the crystal orientations, we inserted very thin CeO
2 layers of 10 nm between the Ni and the Y
2O
3 layers, and between the Y
2O
3 and the YBCO layers. The
Jc of the 1 μm-thick YBCO layer prepared on the CeO
2 /Y
2 O
3 /CeO
2 -buffered Ni-electroplated {100}<001> textured Cu/SUS316 laminated tape reached 2.1 MA/cm
2 (
Ic of 210 A-cm width) at 77 K in a self-field.
抄録全体を表示