JSAP Annual Meetings Extended Abstracts

The 61st JSAP Spring Meeting 2014

Displaying 2701-2750 of 3867 articles from this issue

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Diffusion-reaction mechanisms of nitriding species (NH_x) in SiO₂, Si₃N₄ and Si

Yasushi Nakasaki, Izumi Hirano, Masayasu Miyata, Koichi Kato, Yuuichir ...

Session ID: 18a-D8-5
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2701

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Effects of biaxially-tensile strain on properties of Si/SiO2 interface states generated by electrical stress

Weili Cai, Mitsuru Takenaka, Shinichi Takagi

Session ID: 18a-D8-6
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2702

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Investigation on the mechanism for data retention in MONOS memories with changing Si content in charge trap SiN layer

Shosuke Fujii, Naoki Yasuda

Session ID: 18a-D8-7
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2703

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A guideline for SiN design for the improvement of both erase and retention performances in MONOS memories

Shosuke Fujii, Naoki Yasuda

Session ID: 18a-D8-8
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2704

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Influence of the Work Function of Metal Gate Electrodes on UV-Light-Induced Conduction Currents through Silicon Nitride Films

Aran Suzuki, Kiyoteru Kobayashi

Session ID: 18a-D8-9
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2705

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High-temperature memory retention properties of Al/Al₂O₃/Al-rich Al-O/SiO₂/p-Si gate structure

Shinya Ozaki, Takeshi Kawae, Akiharu Morimoto

Session ID: 18a-D8-10
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2706

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Effects of Annealing Ambient on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi

Session ID: 18a-D8-11
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2707

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Mechanism of Dipole Layer Formation at High-k/SiO2 Interface: Multipole-induced Oxygen Migration Model

Shimura Kosuke, Ryo Kuriyama, Masahiro Hashiguchi, Ryusuke Takahashi, ...

Session ID: 18a-D8-12
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2708

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Improvement of Interfacial Properties of High-k/Ge Gate Stacks by Post-Metal Anneal

Ryohei Tanaka, Iori Hideshima, Yuya Minoura, Akitaka Yoshigoe, Yuden T ...

Session ID: 18p-D8-1
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2709

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Al/Ge Simultaneous Oxidation Process by using Oxygen Neutral Beam for Ge Gate Stack

Daiki Nakayama, Takeo Ohno, Masaki Kitajo, Seiji Samukawa

Session ID: 18p-D8-2
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2710

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Low-temperature fabrication of Al2O3/Ge gate stacks using post plasma oxidation

Yuta Nagatomi, Yuichi Nagaoka, Kesuke Yamamoto, Dong Wang, Hiroshi Nak ...

Session ID: 18p-D8-3
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2711

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Interface Engineering of HfO₂/Ge Gate Stack Structure by Rutile TiO₂ Inter Layer

Kazuyoshi Kobashi, Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yama ...

Session ID: 18p-D8-4
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2712

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Fabrication and Evaluation of GeO₂/Ge structure Using Kr/O₂ Plasma Oxidation

Yuya Nakatani, Marina Yamaguchi, Yoshitaka Iwasaki, Tomo Ueno

Session ID: 18p-D8-5
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2713

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Physical Factor Determining Interface State Density of Gate-insulator/Ge Interface during Oxidation Process

Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, ...

Session ID: 18p-D8-6
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2714

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Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance

Katsuhisa Tanaka, Rui Zhang, Mitsuru Takenaka, Shinichi Takagi

Session ID: 18p-D8-7
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2715

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The impact of Ge composition on the improvement of the interface trap density at Al2O3/SiGe MOS interface with plasma post-nitridation

Jaehoon Han, Rui Zhang, Takenori Osada, Masahiko Hata, Mitsuru Takenak ...

Session ID: 18p-D8-8
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2716

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Theoretical study for adsorption of tri-methyl aluminum molecule on GaN (0001) surface

Shunsuke Chikada, Masakazu Takao, Atsushi Honda, Shin'ichi Higai, Kous ...

Session ID: 18p-D8-9
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2717

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Robustness of Sn Precipitation at Ge_1-xSn_x Surface on Ge(001) during Thermal Oxidation

Kimihiko Kato, Takanori Asano, Noriyuki Taoka, Mitsuo Sakashita, Osamu ...

Session ID: 18p-D8-10
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2718

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Study of the pre-deposition treatment for Al₂O₃/GaSb MOS structures

Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Te ...

Session ID: 18p-D8-11
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2719

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Impact of ALD process on of La₂O₃/InGaAs interface roughness

Hiroshi Omine, Dariush Hassan Zadeh, Kuniyuki Kakushima, Akira Nishiya ...

Session ID: 18p-D8-12
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2720

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Ga₂O₃ and Al₂O₃ hybrid passivation for improving of HfO₂/InGaAs MIS characteristics

Wipakorn Jevasuwan, Tatsuro Maeda, Noriyuki Miyata, Minuro Oda, Toshif ...

Session ID: 18p-D8-13
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2721

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Low D_it La₂O₃/In_0.53Ga_0.47As Gate Stack scaled to sub-nm CET

Daryoush Hassan Zadeh, Hiroshi Oomine, Kuniyuki Kakushima, Yoshinori K ...

Session ID: 18p-D8-14
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2722

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Electron mobility improvement due to GaO_x passivation layer formed by pre-deposition anneal in HfO₂/In_0.53Ga_0.47As nMISFET with sub-1.0 nm EOT

Minoru Oda, Toshifumi Irisawa, Yuuichi Kamimuta, Jevasuwan Wipakorn, T ...

Session ID: 18p-D8-15
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2723

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Passivation of Silicon Surfaces by Oxygen Plasma Treatments

Tomohito Node, Shinya Yoshidomi, Jun Furukawa, Hiroshi Abe, Masahiko H ...

Session ID: 19p-PG2-1
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2724

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Penetration of H2O and HBr molecules into SiNx films with Si deficits

Tomoki Oku, Toshihiko Shiga, Masahiro Totsuka, Masayoshi Takemi

Session ID: 19p-PG2-2
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2725

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Density Distribution of Oxide Thermally grown on Silicon Surface

Syuhei Doi, Mariko Hayashi, Ryu Hasunuma, Kikuo Yamabe

Session ID: 19p-PG2-3
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2726

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Comparative study on reliability of ultrathin amorphous and polycrystalline HfO2 films

Yusuke Tomura, Ryu Hasunuma, Kikuo Yamabe, Shinji Migita

Session ID: 19p-PG2-4
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2727

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Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)

Takuya Seki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, N ...

Session ID: 19p-PG2-5
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2728

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DLTS Evaluation of Near-Interface Traps in Ge-MIS Structures with Aluminum-Germanate Insulator Layers Fabricated by ALD Techniques

Hidefumi Narita, Yukio Fukuda, Yohei Otani, Kosei Yanachi, Takehiro Ha ...

Session ID: 19p-PG2-6
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2729

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Investigation of Suppression Mechanism of High-k/Ge Interfacial Reaction Using Ultrathin AlOx Insertion

Shingo Ogawa, Naohiko Kawasaki, Kosuke Kimura, Ryohei Tanaka, Yuya Min ...

Session ID: 19p-PG2-7
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2730

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Fabrication and Evaluation of Germanium Oxide Film made by a CVD process

Yuto Matsuoka, Yoshitaka Iwasaki, Tomo Ueno

Session ID: 19p-PG2-8
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2731

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Oxidation of Ge Surface by Microwave-generated Oxygen Radical Irradiation

Kosei Yanachi, Rikii Harada, Byeonghak Yoo, Keita Seki, Hiroki Ishizak ...

Session ID: 19p-PG2-9
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2732

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Formation of GeO₂ Thin Films on p-Ge Substrate by Reactive RF Sputtering

Byeonghak Yoo, Keita Seki, Taito Kikuchi, Kosei Yanachi, Hiroki Ishiza ...

Session ID: 19p-PG2-10
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2733

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Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement

Chunmeng Dou, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, ...

Session ID: 19p-PG2-11
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2734

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Effect of additional metal atoms in ALD-Al₂O₃/InGaAs interface

Toshiyuki Yoshida

Session ID: 19p-PG2-12
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2735

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Uncooled infrared sensors with advanced functions using plasmonic metamaterials –asymmetric structure for polarization selective function-

Kyohei Masuda, Shinpei Ogawa, Yosuke Takagawa, Koichi Miyashita, Masaf ...

Session ID: 18a-E14-1
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2736

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Circuit integration on crystalline orientated gamma-Al₂O₃/Si(001) substrate and its characterization

Koji Oishi, Daisuke Akai, Makoto Ishida

Session ID: 18a-E14-2
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2737

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Fabrication and evaluation of pyroelectric infrared sensor useing infrared absorption film SiON

Kazuki Oe, Shota Yonemaru, Koji Oishi, Daisuke Akai, Makoto Ishida

Session ID: 18a-E14-3
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2738

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Silicon micromechanical resonator with high quality factor fabricated by damage-free neutral beam etching process

Halubai Sekhar, Tomohiro Kubota, Van Toan Nguyen, Takahito Ono, Seiji ...

Session ID: 18a-E14-4
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2739

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Technique of Wide Area Si Etching with ClF₃ Cluster Beam (2)

Yu Yoshino, Takehiko Senoo, Kunihiko Koike, Toshio Seki, Takaaki Aoki, ...

Session ID: 18a-E14-5
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2740

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Dynamic characteristic profiling of nano- and micromechanical resonator using scanning electron microscope

Reo Kometani, Kazuhiro Nakano, Sunao Ishihara, Shinichi Warisawa

Session ID: 18a-E14-6
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2741

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Fabrication of SiC/Si Hybrid Accelerometer for High Temperature Applications

Rakesh Chand, Masayoshi Esashi, Shuji Tanaka

Session ID: 18a-E14-7
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2742

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Responsivity improvement of photodiode in a MEMS Fabry-Perot interferometric surface stress sensor

Yoshihiro Masuya, Kazuhiro Takahashi, Ryo Ozawa, Takeshi Hizawa, Makot ...

Session ID: 18a-E14-8
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2743

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Development of graphene MEMS resonator for high sensitivity mass sensor

Ryota Ohashi, Kazuhiro Takahashi, Makoto Ishida, Kazuaki Sawada

Session ID: 18a-E14-9
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2744

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3D CMOS Device by Using Wafer-level 3D Integration Technology

Mayu Aoki, Futoshi Furuta, Kazuyuki Hozawa, Yuko Hanaoka, Kenichi Take ...

Session ID: 18a-E14-10
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2745

CONFERENCE PROCEEDINGS FREE ACCESS

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Strain Distributions at Edge of Corner in Bonded Si in Chip-On-Wafer Structures

Noriyuki Taoka, Osamu Nakatsuka, Mizushima Yoriko, Hideki kitada, Kim ...

Session ID: 18p-E14-1
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2746

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Application of electrophoretic deposition of nano-particles to high-speed via filling

Ryo Takigawa, Kiyoaki Nakahara, Takanori Shuto, Akihiro Ikeda, Tanemas ...

Session ID: 18p-E14-2
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2747

CONFERENCE PROCEEDINGS FREE ACCESS

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In-Situ Observation of Ultrasonic Bonding of Cone Bump Using High Speed Camera

Takanori Shuto, Tanemasa Asano

Session ID: 18p-E14-3
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2748

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Mechanism of Room-Temperature Microjoining Using Ultrasonic Bonding of Compliant Bump

Keiichiro Iwanabe, Takanori Shuto, Tanemasa Asano

Session ID: 18p-E14-4
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2749

CONFERENCE PROCEEDINGS FREE ACCESS

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Fabrication of Three-Dimensional Integrated Circuits by using Au/SiO₂ Hybrid Bonding

Masahide Goto, Kei Hagiwara, Yoshinori Iguchi, Hiroshi Ohtake, Takuya ...

Session ID: 18p-E14-5
Published: March 03, 2014
Released on J-STAGE: July 07, 2023

DOIhttps://doi.org/10.11470/jsapmeeting.2014.1.0_2750

CONFERENCE PROCEEDINGS FREE ACCESS

Download PDF (312K)

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