The variation of residual charge and the ratio of conductivity to capacity for some crystalline dielectrics belonging to every crystallographic systems and some amorphous dielectrics were investigated experimentally by using a specially designed apparatus, and obtained the following results.
1. The accumulation time at which the residual charge is saturated, decreases as the temperature rises and the magnitude of residual charge increases with temperature; with further rise of temperature, the accumulation reaches a maximum with respect to time. The maximum accumulating time and the maximum value of residual charge decreases as the temperature rises.
2. The saturated value of residual charge increases with temperature and reaches a maximum, after which it decreases and tends to a certain stational value. The maximum tem erature and the maximum value of residual charge are characteristic for different materials and for different directions of crystal. As in the case of selenite, for a hydrite crystial, the saturated value of residual charge remains constant, though the temperature rises, till the whole water of crystallization is driven off. As in the case of barite, for some material, some different feature of variation of residual charge is taken place in the fresh heating.
3. The ratio of conductivity to capacity increases gradually with temperature at first, then it increases rapidly as the temperature of maximum residual charge being the middle point, and then gradually tends to a certain saturation value. The rate of increase of the ratio of conductivity to capacity is generally far greater than that of the saturated value of residual charge. As in the case of selenite, for a hydrite crystal, the ratio of conductivity to capacity remains constant till the whole water of crystallization is driven off, and afterwards it rapidly increases with temperature. As in the case of barite, for some material, the variation is quite different from other materials in the first heating.
4. The variation of residual charge with temperature seems to be mainly due to that of conductivity, since the variation of capacity due to temperature be very small when compared with that of conductivity. Thus we conclude that the mechanism of residual charge and of its variation due to temperature, may satisfactorily explain by a function of conductivity and the variation of its temperature coefficient.
5. Good insulating materials such as crystals belonging to monoclinic system (mica, selenite) and ambroid paper have generally a large maximum temperature (at which the residual charge becomes maximum) and comparatively a small residual charge. Amorphous dielectrics generally become greatly conductive above 100°C
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