巻号一覧
12 巻, 5 号
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論文
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名古 久美男1988 年 12 巻 5 号 p. 597-601
発行日: 1988/11/30
公開日: 2013/01/11
ジャーナル オープンアクセスStructure dependence of magnetic properties of Fe-Al-Si (Sendust) alloy films was studied. The films were fabricated by electron beam evaporation method. The structure was changed by annealing or substrate temperature. Annealing improved the soft magnetic properties of the films. X-ray diffraction showed that the stress in crystal grains in the films decreased and ordering of the DO3 structure was enhanced by annealing. On the other hand, however both grain size and degree of orientation of the film were changed by the substrate temperature, soft magnetic properties depend strongly on degree of orientation.抄録全体を表示PDF形式でダウンロード (290K) -
丸山 洋治, 鈴木 良1988 年 12 巻 5 号 p. 602-607
発行日: 1988/11/30
公開日: 2013/01/11
ジャーナル オープンアクセスA primary operation of Bloch Line (BL) memory chips has been demonstrated with improvements of write and read functions. A novel write gate using a simple sequence has been proposed. Four BL's generated by the write current are converted into one stable BL pair, collapsing two BL's by Bloch point nucleation. The stable BL pair has been generated in the write current range of 110-130 mA (17% margin) under the in-plane field of 3 Oe. For a read gate, BL separation by a local in-plane field realizes a discrimination between a σ or χ stripe by chopping a stripe head. A σ stripe head can be chopped into a bubble in the read current range of 148-185 mA (22% margin) under the in-plane field of 3 Oe. With these functions connecting to a current-access propagation track, the shift register operation has demonstrated the possibility of BL memory devices.抄録全体を表示PDF形式でダウンロード (335K)
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