Fe films have been deposited by double ion beam sputtering with Kaufman type ion source. For the Ar bombardment ion source, the voltage V
A was varied in the range of 80-2000 V. The current density J
A was fixed at 0.49 and 0.049 A/m
2, that is, the power density of Ar bombardment P
A' the product of V
A and J
A' was changed in the range of 3.9-980 W/m
2. The P
A dependence of the magnetic properties of the Fe films has been investigated in detail.
Fe films with the coercivity H
C below 5 Oe were deposited on the substrates ion-bombarded at P
A in the range of 30-70 W/m
2. The saturation magnetization 4πM
S of the films was 21.5 kG at P
A of 9.6 and 96 W/m
2. The electric resistivity ρ took the maximum value of 80 μΩcm at P
A of 980 W/m
2. This value was 2.7 times as large as that without Ar bombardment. These results imply that the bombardment by Ar ions with an optimum power density is very useful technique to obtain the Fe films with good magnetic properties and the high electric resistivity for a backlayer of perpendicular recording media.
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