The thin films of Fe-Si-B alloy were prepared by using the RF tetrode type of sputtering apparatus, which can deposit the amorphous films with lower contents of Si and B in aid of moderate plasma exposure. The as-deposited thin films on the water-cooled substrates at room temperature had the saturation magnetization 4πM
s of 11.5 KG, the coercivity H
c of 15 Oe, the relative permeability μr of 43 and the magnetostriction constant λ of 18 x 10
−6. The thin films prepared at the substrate temperature T
s of 180∼220°C and the post-annealing temperature T
A of 420∼440 °C exhibited large 4πM
s of 14.8∼15.3 KG, low H
c of 0.1∼0.2 Oe, high μ
r of 6,000∼8,000 and small λ of 1.5∼1.8 x 10
−6.
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