Journal of the Magnetics Society of Japan
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
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Volume 25, Issue 3_1
Displaying 1-2 of 2 articles from this issue
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Contributed Paper
  • Crystal Structures and Magnetic Properties of Epitaxially Grown FeNi Films Prepared by Ion-Beam Sputtering
    Y. Kato, M. Inoue, T. Fujii
    2001 Volume 25 Issue 3_1 Pages 149-154
    Published: 2001
    Released on J-STAGE: February 02, 2007
    DOIhttps://doi.org/10.3379/jmsjmag.25.149
    JOURNAL OPEN ACCESS
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    We prepared epitaxially grown Fe100-xNix films on (1100) GaAs single-crystal substrates by means of ion-beam sputtering, and examined their fundamental properties such as crystal structure and magnetic anisotropy in detail. In epitaxially grown Fe100-xNix films, we found that single-crystalline bcc phase remains unless x exceeds 30 at% judging from streaky RHEED patterns. A decrease in magnetization was observed at x=40 at%, which means that the invar composition shifts by about 10 at% toward Ni-rich composition. Reflecting single-crystal bcc alloys, magnetization curves measured with a VSM and a torque magnetometer could be well reproduced by biaxial magnetocrystalline anisotropy and magnetoelastic anisotropy caused by the lattice misfit between film and GaAs substrate, where the internal stress is considered to be greatly reduced.
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  • Orientational Dependence of Magnetic Tunnel Junctions Using an Fe3O4 Layer
    M. Takeuchi, M. Hiramoto, N. Matsukawa, H. Adachi, S. Okamura, T. Shio ...
    2001 Volume 25 Issue 3_1 Pages 155-158
    Published: 2001
    Released on J-STAGE: February 02, 2007
    DOIhttps://doi.org/10.3379/jmsjmag.25.155
    JOURNAL OPEN ACCESS
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    Magnetic tunnel junctions using an epitaxial magnetite (Fe3O4) layer were prepared on Si/SiO2, MgO {100}{110}, and {111} single-crystal substrates, and their properties were studied. Tunnel junctions of U.L./Fe3O4/Al-oxide/CoFe were fabricated by rf sputtering. An epitaxial Fe3O4 layer was grown by sputtering and was found to be highly oriented in it’s crystal axis in the film plane. Each Fe3O4 showed markedly different MR properties depending on the epitaxy planes of the MgO single-crystal substrate. The Fe3O4/Al-oxide/CoFe film deposited on {110} MgO showed the highest MR ratio of 10% when the field was applied along the easy axis of the epitaxial Fe3O4. The MR properties of the film deposited on {110} MgO exhibited a strong angular dependence in the film plane.
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