Application of depth profile for organic materials in TOF-SIMS (Time-of-flight secondary ion mass spectrometry) has been spread rapidly by utilizing C₆₀ ion beam and Ar-GCIB (Ar gas cluster ion beam). In order to obtain accurate chemical depth distributions, we developed a cross-section observation method in TOF-SIMS using Ar-GCIB. This report describes the result of studies for usefulness in this method. A cross-section observation maintaining molecular structures can be obtained in this method, it is therefore, useful for structure analysis of complex organic materials by depth distributions of molecular species in an accurate scale, which is difficult in three dimensional sputter depth profile.

  Hard X-ray photoemission spectroscopy (HAXPES) is a relatively new technique that has become practically available recently. HAXPES is now attracting much attention from scientific and industrial researchers as a powerful tool for analyzing the electronic states of the material with the probing depth several times deeper than that of the conventional photoemission spectroscopy (PES). In this article, the principle and the characteristic of HAXPES are outlined with several examples of the researches utilizing this technique. Then two HAXPES measurement systems at BL46XU of SPring-8 equipped with different types of electron spectrometer, i.e., VG-Scienta R4000-10 keV and Focus HV-CSA 300/15 are described in detail. We will also give brief explanation for how to use SPring-8 beamlines.