The scanning Auger microprobe is widely used for the analysis of sub-micron region of industrial products. The electron irradiation damage on silicon dioxide is usually estimated from the slightly changes of the peak shapes qualitatively. It is, then, very important to determine the electron irradiation damage on silicon dioxide quantitatively. We proposed a simple measurement method to determine the decomposition cross section of SiO
2/Si sample due to electron irradiation from intensity measurement of SiLVV peak. The critical electron dose for SiO
2 can be calculated from values of the SiO
2 decomposition cross section and that of Si.
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