99.99% Al specimens were anodized in 10% H
2SO
4 and 2% H
2C
2O
4⋅2H
2O solutions at 20, 30, and 40°C by applying a constant current,
ia, in the range 0.5-100mA/cm
2. The anode potential,
Ea, and the dissolution current of oxide,
id, were measured during anodization. The porosity, α, and the thickness,
h, of the formed oxide were measured as functions of current and temperature. Plots of
Ea against log
ia were always S-shaped curves which tend to shift to lower potential region with increasing temperature. It was found for fixed anodic charge that (dissolution rate) and α decrease with increasing current and decreasing temperature. The decreases in
id/ia and α are always accompanied by an increase in the total film-thickness,
h. Transport numbers for Al
3+ and O
2- ions in the barrier layer, T
Al3+ and T
O2-, were calculated on the assumptions that Al
3+ ions move into the solution without forming oxide at the barrier layer/solution interface and that part of the oxide produced at the barrier layer/metal interface, due to O
2- migration, dissolves into the solution to form a porous layer. The figure obtained for T
Al3+ was in the range 0.25-0.40 and it was found to increase with decreasing current and rising temperature.
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