This summary introduces ion beam technology under high vacuum condition, especially ion implantation, which utilizes selcted and controlled ion particles.
Since the ion implantation method makes extreme severe condition dynamically, it is the unique method to study particle dynamics on the surface of materials.
The velocity of ion beam accelerated by electrical potential is one hundred times higher than that of explore power of chemical reaction, such as dynamite, which means the temperature of the implanted ion is as much as 500 million degree. Using this extreme energy, we report the study of synthesis of cubic boron nitride (c-BN).
Although there are many molecular dynamics simulations of particle reaction on surface, few experimental proofs are shown for the degrees of pressure and temperature when the ion is attack the surface. By studying the synthesis of c-BN, we report the phase diagram with the substrate temperature and accelerated voltage of ion. Finally, we introduce the next generation of ion beam technique, which induces new method of developing new materials.
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