The Proceedings of The Computational Mechanics Conference

Online ISSN : 2424-2799

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2000.13

Displaying 301-350 of 419 articles from this issue

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Stability Analysis of Thermal Lattice Boltzmann Models

Takeshi SETA, Ryoichi TAKAHASHI

Article type: Article
Pages 587-588
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.587

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Molecular Simulations of Cristalline Membranes via the Monte Carlo and Langevin Techniques

Hiroshi KOIBUCHI

Article type: Article
Pages 589-590
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.589

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Lattice Boltzmann Simulation of Liquid-Gas Two-Phase Flows

Takaji INAMURO, Nobuharu KONISHI, Fumimaru OGINO

Article type: Article
Pages 591-592
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.591

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Comparison between Lattice Boltzmann method and finite difference method for Numerical simulation of droplet

Taro Imamura, Kojiro Suzuki

Article type: Article
Pages 593-594
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.593

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In this paper, the following two methods are used to solve the dynamics of the droplet. One is the Lattice Boltzmann method (LBM). We use the modified Swift model to consider the surface tension. The other is the finite difference method (FDM), which solves the Navier-Stokes equation with a color function in order to distinguish the two phases. The Level-Set method is used as a color function to track the interface. The dynamics of the oscillating droplet in two-dimension are chosen as test problems, and are solved by both methods. Comparing the results shows that LBM has potential to give results with about the same accuracy as FDM with much less computation time.

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Variation of Surface Area During Coalescence And Breakup of Bubbles

Tadashi WATANABE, Kenich EBIHARA

Article type: Article
Pages 595-596
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.595

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Lattice Boltzmann Simulation of Bubble Motion

Naoki TAKADA, Akio TOMIYAMA, Shigeo HOSOKAWA

Article type: Article
Pages 597-598
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.597

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Development of Virtual Reality System for Flowfield around Arbitrary Geometry

Hiroyuki UEHARA, Shinsuke DANBARA, Kazuyuki TODA, Makoto YAMAMOTO

Article type: Article
Pages 599-600
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.599

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Representation Method of Numerical Simulation Data in Immersive Display

Yuichi TAMURA, Akira KAGEYAMA, Tetsuya SATO

Article type: Article
Pages 601-602
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.601

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Realistic Motion Simulation in Virtual World : One Approach using Finite Element Method

Daisuke Tsubouchi, Tetsuro Ogi, Hirohisa Noguchi

Article type: Article
Pages 603-604
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.603

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In this study, in order to realize real-time motion simulation in virtual environment, a new efficient time integration scheme for finite element method 'iterative Newmark' method was developed. This method was applied to several simulations of the virtual object, and the calculation performance and the reality of motion simulation were evaluated.

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CG Animation of Deformation Using Physical Simulation

Katsuyuki SUZUKI, Hideomi OHTSUBO, Kohei KODAMA

Article type: Article
Pages 605-606
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.605

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Aesthetic Design System in Virtual Space

Hiroyuki FUJIKI, Hideki AOYAMA

Article type: Article
Pages 607-608
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.607

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3D CAD systems have recently become essential to manufacturing processes. However it is still difficult to represent sculptured shapes using traditional 3D CAD systems because of its unintuitive interface. Consequently, designers tend to construct physical models such as clay models to express ideas on aesthetic design. with the rapid growth of virtual reality (VR) technologies, intuitive 3D interaction devices are being developed, and these realize intuitive 3D operations on computer. In this study, to overcome the drawbacks of currently used CAD, an interface system using VR devices is proposed. The system permits designers to express their ideas using virtual hands and virtual tools. This paper describes some basic components needed for constructing the system.

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[title in Japanese]

Article type: Appendix
Pages App6-
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.App6

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Multi-Resolution Molecular Dynamics Study on Motion Transfer Mechanism of Metal Nano-cluster

Kenichi SAITOH, Masatoshi TATSUMI, Takehiko INABA

Article type: Article
Pages 609-610
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.609

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Multi-resolution molecular dynamics (MRMD) method is applied to the sikulation of coalescence and growth mechanism of nano-clusters. Lennard-Jones potential with parameters of copper is used. In MRMD method, rigid body motion as cluster is solved with the motion of individual atoms. The latter is calculated only near contact region. The MRMD algorithm is developed to treat the rigid body motion not only with translational transfer but also with rotational one. When collision parameter between approaching clusters exists, rotational motion is usually generated by MD calculation. Nevertheless, the situation is not realized in the present MRMD method. It is supposed that this is because a given principal torque inclines to be dissociated to other components during relatively long coalescence period.

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Molecular Dynamics Simulation of Defect Production under Irradiation in SiC

Yoshinori YAGI, Yoshitaka UMENO, Takayuki KITAMURA

Article type: Article
Pages 611-612
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.611

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The development of the ion shower etching simulator with the molecular dynamics method

Satoshi IZUMI, Yujiro KAIHARA, Syotaro HARA, Shinsuke SAKAI

Article type: Article
Pages 613-614
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.613

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Non-Equilibrium Molecular Dynamics Process in Silica Surface under High Heat Flux

Hisashi NAMBA, Kenichi SAITOH, Takehiko INABA

Article type: Article
Pages 615-616
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.615

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Structural and thermal properties of silica with surface are analyzed by molecular dynamics. The effictive interatiomic potential proposed by P. Vashishta is used in this paper. We introduce a new parameter which represents the variation of local structure in order to present difference of structure between bulk part and surface part. High energy transfer by radiation is provided with thin film model. It is shown that distribution of temperature and its time-evolution agree with the result using finite difference method obtained from one-dimensional unsteady equation of heat conduction.

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A Molecular Dynamic Heat Transfer Simulation Providing the Difference of Time in Temperature at the Boundary

Kouichiro YAMADA, Kyoji HOMMA

Article type: Article
Pages 617-618
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.617

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On the Evaluation Method of Crystal Instability at Finite Temperature by Using Molecular Dynamics

Kisaragi YASHIRO, Yoshihiro TOMITA

Article type: Article
Pages 619-620
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.619

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Evaluation of Activation Energy for Primitive Deformation at Crack Tip

Akinori TEZUKA

Article type: Article
Pages 621-622
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.621

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Crack Growth in Amorphous Metal : 3D Large Scale Molecular Dynamics Analysis

Ryosuke MATSUMOTO, Hiroshi KITAGAWA

Article type: Article
Pages 623-624
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.623

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Molecular Dynamics Simulation on the Interaction of Two Edge Dislocation in fcc Metal

Masanori KIKUCHI, Toshiharu SUZUKI

Article type: Article
Pages 625-626
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.625

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The behavior of dislocations in fcc crystal is simulated using the molecular dynamics approach. At first, single edge dislocation is modeled, and the relaxation is conducted. The result shows that a single dislocation is decomposed of two half dislocations. It is considered to be reasonable because the decomposition into two half dislocations results stable state from the energetic viewpoint. For the interaction problem between two edge dislocation, three models are made analyzed. The results are compared with those of dislocation theory and discussed.

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Influence of Edge Dislocation on Copper Precipitate under Shear Strain

Tadao FUKUTA, Yasuhiro AKAHOSHI, Shoji HARADA

Article type: Article
Pages 627-628
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.627

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Elastic Constant and Electronicstructure of Hydrogen Storage Alloy

Tomoyasu AIHARA, Takanori NAKAZAWA

Article type: Article
Pages 629-630
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.629

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Ab Initio Calculation of Ideal Slip Deformation in Magnesium

Tokuteru UESUGI, Masanori KOHYAMA, Masahide KOHZU, Kenji HIGASHI

Article type: Article
Pages 631-632
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.631

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First principle studies of atomic structure and electronic status for silicon nitride in sliding process

Yoshinari HATANAKA, Shigenobu OGATA, Hiroshi KITAGAWA

Article type: Article
Pages 633-634
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.633

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We study a sliding properties of β-silicon nitride for{0110}, <0001> direction (slip system) by using the first principle molcular dynamics method (FPMD). Detail of atomic configurarion and electoric structure of the material under sliding deformation are examined. It has been proved by means of clasical molecular dynamics (CMD) that sliding easily occurs in this system. First princple simulation also show that the atoms around a Si-N bond in a slipping inter layer region significantly move and the system becomes more stable, while a Si-N bond strech.

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Estimation of Mechanical Properties of a system including both a crack and a grain boundary

Kenji NISHIMURA, Noriyuki MIYAZAKI

Article type: Article
Pages 635-636
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.635

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Deformation Mechanism of Nano-Polycrystalline Materials due to Difference of Stacking Fault Energy (Comparison of Embedded-Atom Method with Effective-Medium Theory)

Tomotsugu SHIMOKAWA, Akihiro NAKATANI, Hiroshi KITAGAWA

Article type: Article
Pages 637-638
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.637

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Monte Carlo Simulation of Cu Precipitation Process via Vacancy in Fe-Cu Alloy

Tadao FUKUTA, Yasuhiro AKAHOSHI, Shoji HARADA

Article type: Article
Pages 639-640
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.639

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MD Analysis on Effect of Crystal Orientation on Mechanical Properties of Laminated Metallic Thin Films

Haruo NAKAMURA, Yasuhiro SAKURAI, Takashi SHIMOKUBO, Hideo KOBAYASHI

Article type: Article
Pages 641-642
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.641

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In a multi-layered structure such as laminated metallic thin films, there is possibility that hydrogen atmosphere causes functional degradation near interfaces. In this study, the molecular dynamics (MD) was applied to multi-layered structures with various crystal orientations to investigate the micro mechanisms of deformation near interfaces and to improve mechanical properties. By laminating a ductile and a brittle crystals alternately, high strength level was achieved without loosing ductility. But mismatch of interfaces can become nucleation sites of boids. Those boids tend to grow toward brittle crystals selectively. Mechanisms of hydrogen invasion and its arrest from a surface were also investigated.

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Thermal Fatigue Reliability Assessment for Solder Joint of CSP

Yasuhisa KAGA, Qiang YU, Masaki SHIRATORI, Masatoshi OHTAKA

Article type: Article
Pages 643-644
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.643

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Stress-Strain Singularity of Solder Bumps

Minoru MUKAI, Hiroyuki TAKAHASHI, Takashi KAWAKAMI, Kuniaki TAKAHASHI, ...

Article type: Article
Pages 645-646
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.645

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Imvestigation on fall impact strength for BGA solder joints

Takahiro SOGO, Satoru HARA

Article type: Article
Pages 647-648
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.647

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The dynamic characteristics of Impact Strength for Solder Joints of BGA

Qiang YU, Masaki SHIRATORI, Shinya IKEDA

Article type: Article
Pages 649-650
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.649

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Impact analysis of mobile personal computer

Takuya ANDO, Misao INOKE, Toyokazu HAMAGUCHI, Masanori MOTEGI

Article type: Article
Pages 651-652
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.651

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Miniaturization of personal computer is progressing, and high impact durability is required. Therefore, the impact strength evaluation technology by CAE should be established quickly. We studied the impact analysis of personal computer equipped with magnetic disk. We obtained the prediction error 4% impact analysis technology by material property modeling.

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Numerical Analysis of Thermo Regist Enhanced Optical Lithography

Etsutaro AKAGAWA, Kenji AMAYA, Shigeru AOKI

Article type: Article
Pages 653-654
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.653

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Evaluation of Material Properties of Copper Thin Films by Micro-indentation Tests

Nagahisa Ogasawara, Norimasa Chiba, Chikao Kuramochi

Article type: Article
Pages 655-656
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.655

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625 STUDY ON MESO-LOCAL DAMAGE AREA EXTENDING IN SHORT FIBER COMPOSITE USING LRM CONSTITUTIVE MODEL

Yadong Wu, Michihiko Nakagaki

Article type: Article
Pages 657-658
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.657

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By the observation of the microscope structure of fiber-reinforced composite, it was proven that local damage regions is easily formed under the strong load. The extension of the damage region is a large factor connected with the material destruction. Therefore, the accurate prediction of the damage region in the composite material is very important for the use and design of the composite material. In this paper, the statistical distribution function on local stress level is introduced. And the mixture law, which can estimate the damage region by appliing the Local Rigidity Method by using statistical distribution function to constitutive law which authors proposed until now, is developed, and the results of the numerical calculation by present mixture law are presented.

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Evaluation of Stress-Intensity Factors of Delamination Interface in IC Packages by Virtual Crack Extension Method

Kenji MACHIDA, Hiroyuki OKAMURA, Kenichi SHIROTA

Article type: Article
Pages 659-660
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.659

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Reliability evaluation of CSP Electronic Devices Package

Hideo Koguchi, Chie Sasaki, Kazuto Nishida

Article type: Article
Pages 661-662
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.661

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Effect of Material Properties on Delamination Strength between ACF and a Chip in an Electronic Device

Takashi KUWAHARA, Toru IKEDA, Noriyuki MIYAZAKI, Yuya UENO, Kazuhiro I ...

Article type: Article
Pages 663-664
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.663

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Development of Flip Chip Bonding Technology (NSD Method) Using Resin Encapsulation Sheet : Examination of Joint Reliability and Physical Property using FEM

Kazuto NISHIDA, Hidenobu NISHIKAWA, Kenichi YAMAMOTO, Kazumichi SHIMIZ ...

Article type: Article
Pages 665-666
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.665

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Solder Shape Analysis Including Surface Tension and Viscosity Effects

Takahiro NAGATA, Takaya KOBAYASHI

Article type: Article
Pages 667-668
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.667

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Process Simulation of BGA Package

Hidehisa SAKAI, Masaki SHIRATORI, Qiang YU, Masahide KANEKO, Takashi F ...

Article type: Article
Pages 669-670
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.669

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Evaluation of Thermal Fatigue Crack Initiation in Solder Joint by Phase Growth Analysis

Toshihiko SAYAMA, Takeshi TAKAYANAGI, Takao MORI

Article type: Article
Pages 671-672
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.671

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Development of Thermal Stress Analysis System for Crystal Growth

Daisuke IMAHASE, Yutaka MATUURA, Noriyuki MIYAZAKI

Article type: Article
Pages 673-674
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.673

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Three-Demensional Dislocation Density Analysis of Bulk Semiconductor Single Crystal during CZ Growth Process

Masatsugu SAKAGUCHI, Noriyuki MIYAZAKI

Article type: Article
Pages 675-676
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.675

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Three-Dimensional Dislocation Density Analysis of Single Crystal Ingot during Annealing Process

Hiroyuki KUTSUKAKE, Noriyuki MIYAZAKI

Article type: Article
Pages 677-678
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.677

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Prediction Method of Electromigration Failure in Passivated Polycrystalline Line by Using Governing Parameter of Electromigration Damage

Kazuhiko SASAGAWA, Masataka HASEGAWA, Masumi SAKA, Hiroyuki ABE

Article type: Article
Pages 679-680
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.679

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Analysis of Oxidation-induced Stress in Shallow Trench Isolation Structures for Semiconductor Devices

Hideo MIURA, Norio ISHITSUKA, Norio SUZUKI

Article type: Article
Pages 681-682
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.681

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The buildup of stress during oxidation of a trench isolation structure is analyzed using a finite element method. In this analysis, we considered stress-dependent oxidation model and the viscoelasticity of materials. The parameters that affect the buildup of stress in the structure are temperature and ambient gas during oxidation and the dimensions (width and depth) of the trench structure. Effective ways for reducing stress are discussed based on simulation results in order to improve product reliability.

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Natural and Marangoni convections effect on the oscillatory phenomenon in the compound semiconductor melt

[in Japanese], [in Japanese], [in Japanese]

Article type: Article
Pages 683-684
Published: November 27, 2000
Released on J-STAGE: June 19, 2017

DOIhttps://doi.org/10.1299/jsmecmd.2000.13.683

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