Total Reflection X-Ray Fluorescence analysis (TRXRF) apparatus for the nondestructive characterization of semiconductor has been developed and applied to Si wafers for ULSI fabrication. Monochromatic X-Ray and other improvements enables us to carry out trace analysis as low as 10
10 atoms/cm
2, distribution analysis and near-surface depth analysis, which has clarified the behavior of trace metals on and nearby surface. The effects of Fe, Ni and Cu on crystal defect generation were clarified by analyzing the same wafer, and the nondestructive tracing during treatments proved its utility. Ultratrace surface analysis on Si wafers as low as 10
8 atoms/cm
2 is established by the impurity condensation technique with a chemical droplet.
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