Silicon carbide (SiC; β-type) plates were prepared by a chemical vapor deposition technique using SiCl
4, C
3H
8 and H
2 as source gases under the following conditions: deposition temperature (
Tdep); 1300°-1800°C, total gas pressure (
Ptot); 30-760Torr and C
3H
8 gas flow rate [FR(C
3H
8)]; 10-90cm
3/min, and the effects of FR(C
3H
8) on the carbon content, density, crystal structure, surface morphology and deposition rate of the deposits were investigated. β-SiC plates were obtained at FR(C
3H
8) between 10 and 40cm
3/min under the above given
Tdep-
Ptot conditions. The density and carbon content of the β-SiC plates were about 3.2g/cm
3 and 30wt%, respectively in agreement with the theoretical values. The surface morphology of the β-SiC plates was faceted pyramid-like at low Ptot and cone-like at high Ptot. The deposition rate of β-SiC increased with increasing FR(C
3H
8) and the maximum deposition rate was 1.4mm/h at
Tdep=1600°C,
Ptot=30Torr and FR(C
3H
8)=25cm
3/min. The activation energy for the β-SiC formation were 12-26 and 10-12kcal/mol at
Ptot=30 and 760Torr, respectively. Free carbon deposited together with β-SiC when FR(C
3H
8) exceeded the value between 55 and 70cm
3/min. The density of the mixture of β-SiC and C decreased from 3.2 to 2.4g/cm
3 as the carbon content increased from 30 to 50wt%, implying that the mixture contained closed-pores.
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