JSAP Annual Meetings Extended Abstracts

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Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

Hiroko Iguchi, Masahiro Horita, Jun Suda

Session ID: 23p-E302-4
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2451

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Threshold voltage control of p-type gate AlGaN/GaN HEMT using Mg diffusion by UHPA

Shunpei Yamashita, Hirotaka Watanabe, Yuto Ando, Atsushi Tanaka, Manat ...

Session ID: 23p-E302-5
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2452

CONFERENCE PROCEEDINGS FREE ACCESS

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The p-type conversion process by Mg thermal diffusion into GaN

Yuta Ito, Shun Lu, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Yoshio ...

Session ID: 23p-E302-6
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2453

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Control of Mg concentration in GaN using vacancy-induced Mg diffusion

Yuta Ito, Kenya Shimamura, Hirotaka Watanabe, Manato Deki, Shugo Nitta ...

Session ID: 23p-E302-7
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2454

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Reverse leakage current due to band-to-band tunneling in dislocation-free GaN pn junctions

Tetsuo Narita, Tomoyuki Shoji, Yoshitaka Nagasato, Masakazu Kanechika, ...

Session ID: 23p-E302-8
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2455

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Increase of reverse leakage current at GaN p-n junctions induced by forward current stress

Tetsuo Narita, Yoshitaka Nagasato, Masakazu Kanechika, Takeshi Kondo, ...

Session ID: 23p-E302-9
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2456

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Electrical Characteristics of p-n Junctions Realized by Distributed-polarization Doping

Takeru Kumabe, Seiya Kawasaki, Hirotaka Watanabe, Yuto Ando, Shugo Nit ...

Session ID: 23p-E302-10
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2457

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Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction diodes

Takuto Ohashi, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Kazu ...

Session ID: 23p-E302-11
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2458

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Proposal of a Method for Carrier Concentration Distribution Measurement in GaN Vertical p-n Diode under Forward Bias utilizing Multi Photon Excitation OBIC

Makoto Yagi, Seiya Kawasaki, Takeru Kumabe, Yuto Ando, Atsushi Tanaka, ...

Session ID: 23p-E302-12
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2459

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Current increasing around avalanche breakdown of vertical p-n junction diode by dislocations

Woong Kwon, Seiya Kawasaki, Hirotaka Watanabe, Atsushi Tanaka, Manato ...

Session ID: 23p-E302-13
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2460

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Two-dimensional characterization of electric fields in n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

Yuto Yasui, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomo ...

Session ID: 23p-E302-14
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2461

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Junction Diameter Dependence of Oscillation Characteristics of GaN IMPATT Diode

Seiya Kawasaki, Takeru Kumabe, Yuto Ando, Manato Deki, Hirotaka Watana ...

Session ID: 23p-E302-15
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2462

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Effect of oxide species on contact resistivity of n-GaN/Oxide/Al

Jiro Koba, Junichi Koike

Session ID: 23p-E302-16
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2463

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Reduction of Specific Contact Resistance on p^--GaN by Thermal Annealed Mg Layer

Shun Lu, Manato Deki, Jia Wang, Kazuki Ohnishi, Yuto Ando, Hirotaka Wa ...

Session ID: 23p-E302-17
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2464

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Characterization of the terahertz emission from semi-insulating gallium nitride and hydrogen dissociation under UV irradiation

Fumikazu Murakami, Mannan Abdul, Kazunori Serita, Hironaru Murakami, M ...

Session ID: 23p-E302-18
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2465

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Characterization of mist-Al₂O₃ gate insulator and its application in mist-Al₂O₃/AlGaN/GaN MOS-HEMTs

Tomohiro Motoyama, Shun Urano, Ali Baratov, Yusui Nakamura, Masaaki Ku ...

Session ID: 24a-E302-1
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2466

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AlGaN/GaN MIS-HEMTs with mist- and ALD-Al₂O₃ gate dielectric

Shun Urano, Joel Asubar, Rui Shan Low, Faris Muhammad, Masaki Ishiguro ...

Session ID: 24a-E302-2
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2467

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Demonstration of normally-off operation in EID AlGaN/GaN MOS-HEMT

Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Ta ...

Session ID: 24a-E302-3
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2468

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Threshold Voltage Shift under Positive Bias Stress in Vertical GaN Trench MOSFETs

Mitsuki Inagaki, Tohru Oka, Nariaki Tanaka, Kazuya Hasegawa, Takatomi ...

Session ID: 24a-E302-4
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2469

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Characterization of AlSiO/n-GaN MOS Structures with Ultra-high-pressure Annealing

Tomoya Tokozumi, Masakazu Kanechika, Tetsu Kachi, Jun Suda

Session ID: 24a-E302-5
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2470

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Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO₂ Dielectrics

Kentaro Onishi, Bunichiro Mikake, Kazuki Tomigahara, Hidetoshi Mizobat ...

Session ID: 24a-E302-6
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2471

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Formation of High-quality SiO₂/GaN MOS Structures by Controlling Oxidation and Reduction Processes

Bunichiro Mikake, Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, ...

Session ID: 24a-E302-7
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2472

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Electrical Properties at Elevated Temperature of Al₂O₃/GaN Interface with HCl Pretreatment

Taisei Nagai, Noriyuki Taoka, Akio Ohta, Makihara Katsunori, Miyazaki ...

Session ID: 24a-E302-8
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2473

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Characterization for trap states of SiO₂/GaN interfaces and SiO₂ films by DLTS

Shingo Ogawa, Hidetoshi Mizobata, Takuma Kobayashi, Takayoshi Shimura, ...

Session ID: 24a-E302-9
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2474

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Effects of Substrate Polarity and Acceptor Concentrations on Electrical Properties of p-GaN MOS Devices Fabricated by Mg-Implantation and Ultra-High-Pressure Annealing

Hidetoshi Mizobata, Yuhei Wada, Mikito Nozaki, Takuma Kobayashi, Takuj ...

Session ID: 24a-E302-10
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2475

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Evaluation of Hole Traps in GaN MOS Structures by Ultraviolet Light Illumination

Kazuki Tomigahara, Takato Nakanuma, Hidetoshi Mizobata, Mikito Nozaki, ...

Session ID: 24a-E302-11
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2476

CONFERENCE PROCEEDINGS FREE ACCESS

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Investigation of the cause of hole traps at the GaN/SiO₂ interface and countermeasures

Shuto Hattori, Kenta Chokawa, Atsushi Oshiyama, Kenji Shiraishi

Session ID: 24a-E302-12
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2477

CONFERENCE PROCEEDINGS FREE ACCESS

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Effects of post-deposition annealing on SiO₂/β-Ga₂O₃(001) band diagram

Daiki Takeda, Koji Kita

Session ID: 24a-E302-13
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2478

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Chemical etching of an InP substrate assisted by graphene oxide

Wataru Kubota, Toru Utsunomiya, Takashi Ichii, Hiroyuki Sugimura

Session ID: 24p-E302-1
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2479

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Characterization of GaN/Diamond Bonding Interface

Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shi ...

Session ID: 24p-E302-2
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2480

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Formation of high-quality SiC/SiO₂ interfaces by suppressing SiC oxidation

Takuma Kobayashi, Takafumi Okuda, Keita Tachiki, Koji Ito, Yu-ichiro M ...

Session ID: 24p-E302-3
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2481

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Impacts of hydrogen treatment time on characteristics of SiC MOSFETs fabricated with oxidation-suppressed process

Shunsei Muraki, Kyota Mikami, Keita Tachiki, Tsunenobu Kimoto

Session ID: 24p-E302-4
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2482

CONFERENCE PROCEEDINGS FREE ACCESS

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Characterization of Interface Traps Near Valence Band by Split C-V measurement

Gyozen Sai, Noriyuki Iwamuro, Hiroshi Yano

Session ID: 24p-E302-5
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2483

CONFERENCE PROCEEDINGS FREE ACCESS

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Effect of Excimer Ultraviolet Light Irradiation on NO-Nitrided SiC MOS Devices

Hiroki Fujimoto, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, T ...

Session ID: 24p-E302-6
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2484

CONFERENCE PROCEEDINGS FREE ACCESS

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Impacts of out-of-plane position of interface states on Hall mobility in SiC MOS inversion layers

Hajime Tanaka, Nobuya Mori

Session ID: 24p-E302-7
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2485

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Effective Vertical Field Dependence of Hall Mobility for SiC MOSFETs with Various Gate Oxides

Koji Ito, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

Session ID: 24p-E302-8
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2486

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Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide

Munetaka Noguchi, Toshiaki Iwamatsu, Hiroyuki Amishiro, Hiroshi Watana ...

Session ID: 24p-E302-9
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2487

CONFERENCE PROCEEDINGS FREE ACCESS

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Characterization of deep trap profiles in near-interface oxide of SiC MOS interfaces using various irradiated light wavelengths and measurement temperatures

Rimpei Hasegawa, Koji Kita

Session ID: 24p-E302-10
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2488

CONFERENCE PROCEEDINGS FREE ACCESS

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Understandings of the kinetic balance between N incorporation and removal affected by SiC surface oxidation for 4H-SiC/SiO₂ structure in high-temperature N₂ (+O₂) annealing

Yang Tianlin, Koji Kita

Session ID: 24p-E302-11
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2489

CONFERENCE PROCEEDINGS FREE ACCESS

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NO annealing simulation of 4H-SiC/SiO₂ by charge-transfer type molecular dynamics

Yuki Ohuchi, Hidenori Saeki, Hiroki Sakakima, Satoshi Izumi

Session ID: 24p-E302-12
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2490

CONFERENCE PROCEEDINGS FREE ACCESS

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Mobility change of 4H-SiC(0001) Trench MOSFET by mechanical stress

Naotoshi Hikosaka, Eiji Kagoshima, Shigehisa Shibayama, Mitsuo Sakashi ...

Session ID: 24p-E302-13
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2491

CONFERENCE PROCEEDINGS FREE ACCESS

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Ab initio study for reaction of nitrogen oxide and NH₃ at 4H-SiC/SiO₂ interface

Toru Akiyama, Tsunashi Shimizu, Tomonori Ito, Hiroyuki Kageshima, Kenj ...

Session ID: 24p-E302-14
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2492

CONFERENCE PROCEEDINGS FREE ACCESS

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Behavior of V_th under Negative High Gate Oxide Electric Field Stress on SiC MOSFETs

Munetaka Noguchi, Akihiro Koyama, Toshiaki Iwamatsu, Hiroshi Watanabe, ...

Session ID: 24p-E302-15
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2493

CONFERENCE PROCEEDINGS FREE ACCESS

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Analysis of interface trap distribution in SiC MOSFETs by 3 level charge pumping method

Atsuhiro Akiba, Yano Hiroshi

Session ID: 24p-E302-16
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2494

CONFERENCE PROCEEDINGS FREE ACCESS

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Nitrogen Doping for SiC Substrate by KrF Excimer Laser Study of Laser Doping Mechanism (part 3)

Kaname Imokawa, Ryoichi Nohdomi, Yasutsugu Usami

Session ID: 25p-E301-5
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2495

CONFERENCE PROCEEDINGS FREE ACCESS

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Three-dimensional self-heating measurement of SiC Schottky barrier diode using optical-interference contactless thermometry (OICT)

Keiya Fujimoto, Hiroaki Hanafusa, Takuma Sato, Seiichiro Higashi

Session ID: 25p-E301-6
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2496

CONFERENCE PROCEEDINGS FREE ACCESS

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Research on imaging technique for transient thermal diffusion processes in silicon wafers by Optical-Interference Contactless Thermometry (OICT)

Kotaro Matsuguchi, Keiya Fujimoto, Jiawen Yu, Hiroaki Hanafusa, Takuma ...

Session ID: 25p-E301-7
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2497

CONFERENCE PROCEEDINGS FREE ACCESS

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Analyzing Variations of Blocking-Voltage and Capacitance for 4H-SiC Power Devices Toward Guarantee of Long-Term Reliability

Hiroyuki Matsushima, Yuki Mori, Aikio Shima, Noriyuki Iwamuro

Session ID: 25p-E301-8
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2498

CONFERENCE PROCEEDINGS FREE ACCESS

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Photocurrent measurement in n-GaN/p-GaAs junction fabricated by directly bonding GaN epi layer grown on free-standing substrate

Shota Ishimi, Makoto Hirose, Jianbo Liang, Naoteru Shigekawa

Session ID: 25p-P11-1
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2499

CONFERENCE PROCEEDINGS FREE ACCESS

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Effect of UV Exposure on Electrical Damage Introduced into p-Type GaN by Ar⁺ Ion Bombardments

Akira Toyotome, Yoshitaka Nakano, Retsuo Kawakami, Masahito Niibe

Session ID: 25p-P11-2
Published: February 25, 2022
Released on J-STAGE: April 19, 2025

DOIhttps://doi.org/10.11470/jsapmeeting.2022.1.0_2500

CONFERENCE PROCEEDINGS FREE ACCESS

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