Journal of the Illuminating Engineering Institute of Japan
Online ISSN : 2185-1506
Print ISSN : 0019-2341
ISSN-L : 0019-2341
Volume 35, Issue 4
Displaying 1-7 of 7 articles from this issue
  • [in Japanese]
    1951Volume 35Issue 4 Pages 132-136
    Published: September 25, 1951
    Released on J-STAGE: July 19, 2011
    JOURNAL FREE ACCESS
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  • SUMITADA ASANO
    1951Volume 35Issue 4 Pages 137-144
    Published: September 25, 1951
    Released on J-STAGE: July 19, 2011
    JOURNAL FREE ACCESS
    In order to investigate the possibility to utilize a SiC heat-radiator as a radiant source for infra-re d ray drying, some infra-red units whichconsisted of a rod-like SiC heat-radiator and a alminium reflector were constructed, and their distrebution of radiant density and their unit effecincy were measured. The sizes of thealrninium cylindroiaal surface reflectors prepared for expreiments were as follows.
    Radius of cylindrical surface or distance between focal lines of the elliptic cylindroid.(mm)
    Focal length of parabolic cylindroid.(mm)
    Length of edges of ref lectlector.(rectangle) (mm)
    A 80 40 450 470
    B 60 40 350 250
    C 50 25 350 160
    D 20 40 350 250
    In conclusion, comparing the SiC units designed by the auther with a lamp unit as to advantages and disadvantages are as follows.
    (a) Advantages.
    1. SiC radiator is firm mechanically and proof against vibration. Moreover its life is fairly long (3000-4000 hours).
    2. Infra-red ray longer than wave-length 4 μ, which any lamp cannot radiate, is gained abundantly from SiC radiator. Therefore, as glass, water, synthetic resins, paper, clothes, gum, paints except black one and so on well absorb the infa-red ray of longer wave-length, SiC unit is specially effective for the drying ot such samples.
    3. SiC unit has considerably high radiant efficiency. Specially in the case ot unit D, it is higher than 70% and almost the same as the highest radiant efficiency of a lamp unit 74%.(b) Disadvantages.
    1. As a SiC radiator is a semi-conductor, its electric resistance increases gradually. So it is very difficult to produce a SiC radiator having a consntant norm.
    2. In the case SiC unit, a radiator having the temperature about 1000 °C is laid bare. Therefore the drying of some ignitable samples or samples whicih yield ignitable gas by drying, is attended withthe possibility of catching fire.
    According to those results of my experiments, I believe that it is possible to realize a SiC unit for practical use with the a melioration of both the radiator and the reflector.
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  • Toshiichi SASAKI
    1951Volume 35Issue 4 Pages 145-152
    Published: September 25, 1951
    Released on J-STAGE: July 19, 2011
    JOURNAL FREE ACCESS
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  • 1951Volume 35Issue 4 Pages 151
    Published: 1951
    Released on J-STAGE: July 19, 2011
    JOURNAL FREE ACCESS
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  • [in Japanese]
    1951Volume 35Issue 4 Pages 155-155,136
    Published: September 25, 1951
    Released on J-STAGE: July 19, 2011
    JOURNAL FREE ACCESS
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  • 1951Volume 35Issue 4 Pages 156-157
    Published: September 25, 1951
    Released on J-STAGE: July 19, 2011
    JOURNAL FREE ACCESS
    Download PDF (351K)
  • 1951Volume 35Issue 4 Pages 157
    Published: 1951
    Released on J-STAGE: July 19, 2011
    JOURNAL FREE ACCESS
    Download PDF (176K)
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