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Volume 19, Issue 11
Displaying 1-10 of 10 articles from this issue
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How to Measure the Properties of Nano-Lithographed StructuresMasakazu AONO, Chun-Sheng JIANG, Tomonobu NAKAYAMA, Taichi OKUDA, Shan ...1998 Volume 19 Issue 11 Pages 698-707
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSAbout 10 years have passed since the first demonstration of atom manipulation by scanning tunneling microscopy (STM) was made, and it has become possible to fabricate variously designed nanostructures using scanning probe microscopy (SPM's) including STM. If we consider the next 10 years in this field, it will become most important to measure the functional properties of fabricated nano-structures and therefore to develop new methods that make such measurements possible. In this paper, three new methods developed by the authors are described, which are an independently-driven-double-tip STM, a photon-detecting STM, and a spin-polarized STM of a new mode.View full abstractDownload PDF (15043K) -
Makoto SAKURAI, Carsten THIRSTRUP, Masakazu AONO1998 Volume 19 Issue 11 Pages 708-715
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSAtomic scale desorption and deposition of hydrogen (H) atoms on H-terminated Si(001) surfaces by a scanning tunneling microscope (STM) have been studied. Hydrogen atoms are extracted at either polarity of sample bias voltage. Desorption rate of H atoms shows a power-law dependence on tunnel current (It). When H atoms are locally extracted from a Si(001)-(3×1)-H surface, the dihydride rows partly disappear and instead new monohydride rows appear. Opposite local phase transition from 2×1 structure to 3×1 structure is also observed using H covered tips. Silver (Ag) growth on a pre-patterned Si(001)-(2×1)-H surface has been studied. An isolated dangling bond site can be occupied by an isolated single Ag atom or a 3-dimentional Ag cluster. On a wire of dangling bonds, Ag grows layer-by-layer along the wire.View full abstractDownload PDF (14714K) -
Tomihiro HASHIZUME, Seiji HEIKE, Taro HITOSUGI, Satoshi WATANABE, Masa ...1998 Volume 19 Issue 11 Pages 716-721
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSScanning tunneling microscopy/spectroscopy (STM/STS) and atom manipulation have been used to fabricate and evaluate atomic-scale structures on a hydrogen-terminated Si(100)-2×1-H surface. Atomic-scale Ga wires are fabricated by using selectively adsorbing thermally evaporated Ga atoms on the dangling-bond patterns. Electronic structures of the dangling-bond wires and theoretically predicted properties of the Ga structures, such as the conductivity and the flat-band ferromagnetic property are addressed.View full abstractDownload PDF (11398K) -
Masayoshi ISHIBASHI, Seiji HEIKE, Hiroshi KAJIYAMA, Yasuo WADA, Tomihi ...1998 Volume 19 Issue 11 Pages 722-726
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSA scanning probe lithography that uses a current-controlled exposure system has been developed. We use a negativetype resist and fabricate line-and-space patterns to demonstrate characteristic parameters necessary for the present tech-nique to be applied in the industrial lithography. We find that the cross-setional shape of the developed resist pattern depends on the amount of the exposure dose. The resolution depends on the resist thickness and a minimum line width of 27nm is obtained for a 15-nm-thick resist. The proximity effect is much smaller than that of electron beam (EB) lithography. Electric-field mapping inside the resist is evaluated and the characteristics of the exposure system was explained based on the proposed exposure mechanism.View full abstractDownload PDF (9024K) -
Hitoshi NEJO, Daisuke FUJITA, Hanyu SHENG, Takashi UCHIHASHI, Urs RAMS ...1998 Volume 19 Issue 11 Pages 727-733
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSSince it was suggested that individual atoms can be manipulated using scanning tunneling microscope (STM), many attempts have been done to control atoms individually, but they were not successful so far. Here we show some meth-ods for fabricating nanometer- to atomic-scale structures using STM and atomic force microscope (AFM). Focus is put on how to connect these structures to macroscopic electric pads so that electron transport can be measured along these structures.View full abstractDownload PDF (13853K) -
Makoto KASU, Naoki KOBAYASHI1998 Volume 19 Issue 11 Pages 734-741
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSWe describe all-ultra-high-vacuum selective area growth based on surface nitridation and scanning tunneling micros-copy (STM) lithography. We pattern an amorphous nitrified GaAs surfaces by STM lithography, and can grow an array of uniform 6.4±0.8 nm-high GaAs dots successfully on the areas (50 nm×50 nm) from which the nitrided mask is re-moved by STM lithography. For uniformity in such nm-scale growth, the window area should be larger than the “nucleus-occupied area”, defined as the inverse of the saturated nucleus density, and the window separation should be larger than the diameter of the “nucleus-occupied area”.View full abstractDownload PDF (9079K) -
Kazuhiko MATSUMOTO1998 Volume 19 Issue 11 Pages 742-746
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSRoom temperature characteristics of a single electron transistor fabricated using the AFM nano-oxidation process are described. A new and improved AFM nano-oxidation process is introduced, in which (1) the pulse-mode bias is used in-stead of DC bias, that can enhance the height and width aspect ratio of the oxidized metal and (2) atomically flat sub-strates such as α-Al2O3 are used instead of SiO2 substrates. Using these new process, the single electron transistor was fabricated and it shows the clear Coulomb oscilation with the period of 1.8V and a Coulomb diamond characteristics even at higher temperatures than room temperature.View full abstractDownload PDF (6208K) -
Katsuto TANAHASHI, Yuichi KAWAMURA, Naohisa INOUE, Yoshikazu HOMMA1998 Volume 19 Issue 11 Pages 747-751
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSSurface roughening processes in the molecular beam epitaxy of GaAs are studied by in-situ scanning electron micros-copy. Three types of onset of roughening are observed, that is, smooth-to-rough change, coexistence of rough and smooth growths and purely rough growth. The results are compared to the quasi-smooth growth and to the growth of silicon on (111) surface, and the roughening mechanism is discussed.View full abstractDownload PDF (10812K) -
Tatsuya MIYAKE, Hrvoje PETEK1998 Volume 19 Issue 11 Pages 752-757
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSHelium atom scattering (HAS) is a unique technique suitable for studying the structure and dynamics of the outermost layers of crystalline surfaces. In this report, we describe a very compact high-performance HAS apparatus developed for high resolution surface studies. Result of the helium atom scattering experiments on the single crystal copper surfaces under irradiation by H atoms are discussed. Application of helium atom scattering to the understanding of physical and chemical processes in fabrication of sub-quarter-micron Cu interconnects for ultra-large scale integration circuits is discussed.View full abstractDownload PDF (8060K) -
Kaoru IJIMA, Koji NAKAMURA, Manabu TAKAKUWA, Eiko TORIKAI, Kazunobu HA ...1998 Volume 19 Issue 11 Pages 758-759
Published: November 10, 1998
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSDownload PDF (4131K)
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