Momentum of ion bombardment in sputtering deposition process, which strongly depends on internal stress of thin film, has been evaluated regarding to a new parameter
Pi we previously proposed for fine-tuning of mechanical, optical, electrical and magnetic properties. In this study, we demonstrate to estimate the Pi defined as
(i/a) p, where
i the ion flux,
a the atom flux and
p the ion’s momentum, by means of Langmuir probe and multi-grid analyzer in a function of negative bias voltage applied on substrates
Vsub. As a result, it was found that the
Pi was roughly proportional to
Vsub except on lower voltage than 30 V. This indicates that the
Pi should be measured plasma-diagnostically under incident ion energy as low as plasma potential.
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