Oyo Buturi
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Print ISSN : 0369-8009
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Volume 39, Issue 4
Displaying 1-17 of 17 articles from this issue
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  • [title in Japanese]
    [in Japanese]
    1970 Volume 39 Issue 4 Pages 293
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.293
    JOURNAL FREE ACCESS
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  • DOPING PROBLEMS IN FERROELECTRIC SEMICONDUCTORS
    W. HEYWANG
    1970 Volume 39 Issue 4 Pages 294-300
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.294
    JOURNAL FREE ACCESS
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    The resistance anomaly in ferroelectric semiconductors is caused by grain boundary blocking layers arising from an interaction of the n-type bulk doping and the interface acceptor states. In the case of Sb as n-type dopant the kind of incorporation is governed both by the Sb concentration itself and also by the Ti excess so that only in a very narrow concentration range semiconductivity is reached. High Sb concentrations always lead to insulating ceramics with highly shifted Curie temperature. Due to these effects the temperature characteristic of resistance can be strongly influenced by the Sb distribution. A still stronger influence is found for the interface states, which are at least partially due to Cu and Fe. Changing the densities may lead to tailor-made resistivity characteristics or also to materials with insulating blocking layers which can be used as extremely high permittive dielectrics.
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  • Detection of Point Defects and their Clusters by X-Ray Diffraction
    Jun-ichi CHIKAWA, Yuhko ASAEDA, Isao FUJIMOTO
    1970 Volume 39 Issue 4 Pages 301-312
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.301
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    Recent works on effects of point defects and their clusters on x-ray diffraction are reviewed. The defects have a short-range strain fields which are much smaller than extinction distances of x-rays. Non-uniform distributions of the defects produce long-range strains which change greatly both the rocking curve and integrated intensity. However, when the defects are distributed statistically, their effects on diffraction are small and can be observed only for high defect densities by the rocking curve and anomalous transmission intensity measurements. The recent dynamical diffraction theories for crystals containing small defects may explain the observed effects. A new method to detect the defects at a low defect density is described.
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  • A New Method of Ultra-high Power X-ray Diffraction
    Yoshiaki ARATA
    1970 Volume 39 Issue 4 Pages 313-319
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.313
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    The principle of a new ultra-high power X-ray diffraction method and its application are described. In this method, a large number of X-ray beams, arranged cylindrically or conically, incident upon a specimen make multiple diffraction beams or Debye-rings intersecting one another. Local intensities of the same kinds of diffracted X-ray beams or Debye-rings whose number are equal to those of incident beams, superposed into a point or a line, are, therefore, extremely strengthened. By this method, it is possible to make the effective intensity of the diffraction beam much higher, up to hundred times or more, than that in the ordinary Debye-Scherrer method or others and the exposure time needed to obtain a diffraction pattern can be substantially shortened as compared with other common methods.
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  • Focusing Characteristics of Quadrupole Triplet Lens under Asymmetric Operation
    Masahiro UEDA, Koichi NAGAMI, Haruo KURODA
    1970 Volume 39 Issue 4 Pages 320-326
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.320
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    This paper deals with the focusing characteristics and image distortion of a quadrupole triplet lens under asymmetric operation, by which is meant that lenses of different lens strengths are used for the inlet and outlet quadrupole sections. When the ratio of the above two lens strengths is changed, the positions of the two principal planes become asymmetric, nevertheless the focal lengths on the object and image sides are symmetric. Then, the crosssectional multiplication factors can be changed and distortion becomes controllable, even if the object and image distances are given. By adjusting the above ratio and the lens strength of the central quadrupole section, an operation free or very nearly free from astigmatism can be realized under wide range of focal distances. These focusing characteristics are calculated using a digital computer and verified experimentally.
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  • A Unified Study for Intensity Fluctuation of Sampled Data System of Arbitrary Random Signal by the Method of Digital Simulation
    Mitsuo OHTA, Shizuma YAMAGUCHI
    1970 Volume 39 Issue 4 Pages 327-335
    Published: 1970
    Released on J-STAGE: February 20, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.327
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    The principal objectives of the present work is to obtain a formulation of the distribution for the intensity fluctuation of a sampled random signal having an arbitrary correlation and distribution function without simplifying the problem by assuming a simplified input model such as the Gaussian distribution, white noise characteristics etc., and to confirm experimentally the validity of the formulation for few special cases of interest by the method of digital simulation. Letting xi, denote the i-th sampled data of the random signal at time ti(i=1, 2, …, K), an explicit expression of p. d. f. P(E) of E=_??_xi2 is found to be
    P(E)=Em-1/Γ(m)Sme-E/S{1+_??_BnLn(m-1)(E/S)}(m=K/2),
    Bn=(-1)mΓ(m)n!/Γ(m+n)_??_‹_??_1/ni!Hni(xi/σi)›(1/π)m2nΓ(n1/2)Γ(n2+1/2)…Γ(nK+1/2)
    as a solution of an integral equation.
    Introducing a dimensionless variable η=E/S into the above equation, one obtains P(η)=PΓ(η, m)+_??_(-1)nDnPΓ(n)(η, n+m), Dn=(-1)nΓ(m+n)/Γ(m)n!Bn
    where PΓ(η, m)_??_ηm-1exp(-η)/Γ(m) is the well-known gamma distribution density. It should be noticed that the expansion coefficients Dn express respectively the effect of linear and nonlinear correlations among xi's.
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  • Photoconductivity of Vitreous Semiconductors in the System As-S-Te
    Tsutomu MINAMI, Toshikazu TOMIOKA, Masami TANAKA
    1970 Volume 39 Issue 4 Pages 336-340
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.336
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    Photoconductivity of vitreous semiconductors in the system As-S-Te was measured under illumination with white light (2870°K) as a function of illumination intensity, applied voltage and temperature. The resistance changed by a factor of 1.5 to 20 at the illumination intensity of 100 lux, and the ratio of the dark resistance to the resistance on illumination was proportional to about 1/5 th power of resistivities at room temperature. Photocurrent changed linearly with applied voltage. The relationship between photocurrent (IPh) and illumination intensity (E) was expressed by Iph=A•En with two different n values for an individual sample. The n value was about 1.0 at lower illumination intensities, and about 1/2 at higher intensities. This phenomenon implies that the recombination process varies with illumination intensities. Photocurrent varied exponentially as the reciprocal of the absolute temperature, and the activation energy for photoconduction ranged from 0.2 to 0.5 eV. The reason for such values of the activation energy being obtained is briefly discussed.
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  • [title in Japanese]
    [in Japanese]
    1970 Volume 39 Issue 4 Pages 341
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.341
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese]
    1970 Volume 39 Issue 4 Pages 342
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.342
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese]
    1970 Volume 39 Issue 4 Pages 343
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.343
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese]
    1970 Volume 39 Issue 4 Pages 344
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.344
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese], [in Japanese]
    1970 Volume 39 Issue 4 Pages 345-350
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.345
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese]
    1970 Volume 39 Issue 4 Pages 351-356
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.351
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese], [in Japanese]
    1970 Volume 39 Issue 4 Pages 357-368
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.357
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese]
    1970 Volume 39 Issue 4 Pages 369-371
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.369
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese], [in Japanese]
    1970 Volume 39 Issue 4 Pages 372-377
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.372
    JOURNAL FREE ACCESS
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  • [title in Japanese]
    [in Japanese]
    1970 Volume 39 Issue 4 Pages 378-386
    Published: 1970
    Released on J-STAGE: February 09, 2009
    DOIhttps://doi.org/10.11470/oubutsu1932.39.378
    JOURNAL FREE ACCESS
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