Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Volume 92, Issue 11
OYO-BUTURI Vol.92 No.11
Displaying 1-13 of 13 articles from this issue
Science As Art
Editors' Summary
Comprehensive Research Report
  • Riichiro SHIROTA, Koji SAKUI
    2023 Volume 92 Issue 11 Pages 644-654
    Published: November 01, 2023
    Released on J-STAGE: November 01, 2023
    JOURNAL FREE ACCESS

    Japanese company Toshiba has invented and developed NAND Flash Memory, which has been widely used for a smartphone such as iPhone, USB memory, SD card, and SSD. NAND Flash Memory is compact, lightweight, quiet, impact resistant and capable to retain data regardless of whether the power is on or off. Unless NAND Flash Memory was invented, the widespread of personal computers and smartphones was delayed, and hampered the transition to a digital society. Fortunately, a research team of just 10 people at TOSHIBA invented the Flash Memory in the 1980s. The market scale in 2022 has now reached 10 trillion yen, and we cannot imagine a world without it.

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Tutorial
  • Tomoteru FUKUMURA
    2023 Volume 92 Issue 11 Pages 655-661
    Published: November 01, 2023
    Released on J-STAGE: November 01, 2023
    JOURNAL RESTRICTED ACCESS

    Simple rare earth oxides are usually sesquioxides with stable trivalent rare earth ions, exhibiting highly insulating state. On the other hand, several rare earth monoxides with metastable divalent rare earth ions have been synthesized under high pressure only in 1980s, except for chemically stable EuO and YbO. Recently, we found that the rare earth monoxides can be synthesized by using thin film epitaxy. As a result, it is possible to obtain their first single crystalline or new solid phase substances, enabling to unveil their fundamental properties. In this article, we review recent progress on the synthesis and properties of rare earth monoxides.

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  • Noritaka USAMI
    2023 Volume 92 Issue 11 Pages 662-667
    Published: November 01, 2023
    Released on J-STAGE: November 01, 2023
    JOURNAL RESTRICTED ACCESS

    We have been pioneering “multicrystalline informatics” that links experimental, theoretical, computational, and data science to establish universal guidelines for improving the performance of multicrystalline materials, aiming to innovate research methods for materials development using multicrystalline silicon as a model material. In this paper, we describe the research base that has been established and the new knowledge on the mechanism of dislocation cluster generation that has been obtained through their fusion and integration.

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Our Research
  • Takashi SUEMASU
    2023 Volume 92 Issue 11 Pages 668-672
    Published: November 01, 2023
    Released on J-STAGE: November 01, 2023
    JOURNAL RESTRICTED ACCESS

    Semiconducting silicide BaSi2 is an indirect band-gap semiconductor composed of earth-abundant elements with a forbidden bandwidth of about 1.3 eV. It has a large optical absorption coefficient equivalent to CuInS2, and its conductivity type and carrier density can be controlled by impurity doping using group 13 and 15 elements. In this article, an approach to thin-film solar cells on glass substrates is introduced, utilizing the knowledge gained from epitaxial films on Si substrates.

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  • Shintaro YASUI
    2023 Volume 92 Issue 11 Pages 673-677
    Published: November 01, 2023
    Released on J-STAGE: November 01, 2023
    JOURNAL RESTRICTED ACCESS

    Lithium-ion batteries (LIBs) are indispensable energy storage for our daily lives, but from the viewpoint of safety use, all-solid-state batteries have been promoted. Liquid-type LIBs which currently use have excellent cost performance due to optimization of the manufacturing process and other factors. In order to use all-solid-state batteries instead of liquid-type LIBs, various advantages are absolutely necessary. In this paper, I would like to propose all-solid-state batteries that can be handled in air condition and do not require strict dewpoint control, developed from a completely different perspective from conventional battery production.

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Fundamental Lecture
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