Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Volume 91, Issue 3
OYO-BUTURI Vol.91 No.3
Displaying 1-15 of 15 articles from this issue
Science As Art
Editors' Summary
Comprehensive Research Report
  • How to analyze origin and evolution of the Solar System from astromaterials
    Hisayoshi YURIMOTO
    2022 Volume 91 Issue 3 Pages 134-143
    Published: March 01, 2022
    Released on J-STAGE: March 01, 2022
    JOURNAL FREE ACCESS

    Primitive materials formed in the Protosolar System have been remained in astromaterials. The primitive materials record astrophenomena which occurred when the Solar System born at ~4.6 billion years ago. The physicochemical environments and the evolution can be clarified by microanalyses of the primitive materials, e.g., chemical and isotopic compositions of composed minerals. In this report, I explain how clarify origin and evolution of solar system using the oldest rock in the solar system, CAIs, for example, by multiple analysis using characteristic X-ray and electron backscatter diffraction of scanning electron microscopy, stable and radio isotopes by secondary ion mass spectrometry/isotope microscopy, and CAI-formation experiments in laboratory simulated Protosolar system environments.

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Tutorial
  • Jiro IDA
    2022 Volume 91 Issue 3 Pages 144-150
    Published: March 01, 2022
    Released on J-STAGE: March 01, 2022
    JOURNAL FREE ACCESS

    We introduce the steep subthreshold slope (SS) device “PN-Body Tied SOI-FET (PNBT-FET),” as we proposed at IEDM 2015. It has SS < 1 mV/decade over several order drain currents, even with ultralow drain voltage. Currently, it is considered to be one of the ideal steep slope devices ever reported. We also introduce its application to CMOS, RF energy harvesting, and also a neuromorphic device. NMOS/PMOS PNBT-FET, CMOS inverter, 10 mV rectification, single device neuron function have been demonstrated.

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Our Research
  • Satoka AOYAGI
    2022 Volume 91 Issue 3 Pages 151-154
    Published: March 01, 2022
    Released on J-STAGE: March 01, 2022
    JOURNAL FREE ACCESS

    Time-of-flight secondary ion mass spectrometry (TOF-SIMS), which detects chemical information of a solid sample at the most upper surface less than 2 nm and chemical images with a high spatial resolution approximately 100 nm, is widely applied to analyze biological samples, organic materials, and electronic materials. Because the TOF-SIMS spectra and image data are generally very complicated, numerical analysis methods are often required to interpret TOF-SIMS data. Multivariate analysis such as principal component analysis has successfully been applied to TOF-SIMS data interpretation. Recently, sparse modeling and machine learning, which are now applied to many fields, are also employed for TOF-SIMS data analysis. In this article one of the latest examples of machine learning application to TOF-SIMS data is introduced.

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  • Hiroyuki KAGESHIMA, Toru AKIYAMA, Kenji SHIRAISHI, Masashi UEMATSU
    2022 Volume 91 Issue 3 Pages 155-159
    Published: March 01, 2022
    Released on J-STAGE: March 01, 2022
    JOURNAL FREE ACCESS
    Supplementary material

    The thermal oxidation process of Si consists of four processes: (1) diffusion of oxidizing molecules in the oxide film, (2) reaction of oxidizing molecules and Si at the interface, (3) generation and transport of interstitial Si atoms at the interface associated with the reaction, and (4) volume expansion, viscous flow and deformation of the oxidized region. Such complexity is not noticeable in the thermal oxidation of flat Si, and at first glance it seems that it can be easily understood only by (1) and (2). But in the thermal oxidation of Si three-dimensional nanostructures, the complexity is immediately revealed. We introduce the overall microscopic picture of thermal oxidation process mainly based on our research.

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  • Yuzo SHIGESATO, Nobuto OKA
    2022 Volume 91 Issue 3 Pages 160-163
    Published: March 01, 2022
    Released on J-STAGE: March 01, 2022
    JOURNAL FREE ACCESS

    In order to deposit high-quality transparent conductive oxide (TCO) films, the crystallinity and stoichiometry of the films should be optimized precisely. The dc sputter deposition processes using the slightly reduced targets or using metallic targets with the specially designed feed-back systems enable us to deposit the low resistivity TCO films stably with high reproducibility. In such reactive sputtering processes, the feed-back systems of discharge impedance or plasma emission intensity combined with mid-frequency pulsing (50 kHz) are quite effective. The various high-quality TCOs, such as Sn-doped In2O3 (ITO), Al-doped ZnO (AZO), Nb-doped TiO2 (NTO), Sb or Ta-doped SnO2 (ATO or TTO) films can be successfully deposited using In-Sn, Zn-Al, Ti-Nb, Sn-(Sb or Ta) alloy targets, respectively.

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  • Kazuhiro KARAHASHI, Tomoko ITO, Satoshi HAMAGUCHI
    2022 Volume 91 Issue 3 Pages 164-168
    Published: March 01, 2022
    Released on J-STAGE: March 01, 2022
    JOURNAL FREE ACCESS

    Plasma etching involves various reactive ions and neutral species generated in plasmas. A better understanding of surface etching reactions with such species enables highly controlled fabrication of micro/nano-structures on surfaces of various materials. To develop such process technologies, it is crucial to obtain fundamental data on the interactions of various incident ions and radicals with the surfaces of interest and to establish surface reaction models based on such data. In this article, the methods to obtain such data with the use of mass-selected reactive ion beam experiments, numerical simulation, and machine learning techniques are discussed.

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Fundamental Lecture
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