Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Volume 93, Issue 1
OYO-BUTURI Vol.93 No.1
Displaying 1-17 of 17 articles from this issue
Science As Art
Editors' Summary
Tutorial
  • Masaki TAKATA
    2024 Volume 93 Issue 1 Pages 5-11
    Published: January 01, 2024
    Released on J-STAGE: January 01, 2024
    JOURNAL RESTRICTED ACCESS

    NanoTerasu is about to start operation in April 2024. It is a next-generation synchrotron radiation facility under construction at Tohoku University Aobayama New Campus (Sendai City). Speaking of synchrotron radiation facilities, SPring-8 in Hyogo Prefecture, which began operation in 1997, is well known to the general public. After about a quarter of a century, new facilities developed and operated by the government have appeared. The accelerator technology that produces light is based on the unique technology of synchrotron radiation science in Japan, which has been honed at Spring Eight. However, SPring-8 and NanoTerasu have completely different uses. This is because, while SPring-8 is strong in the use of hard X-rays, NanoTerasu has strengths in the use of soft X-rays. Leveraging this strength, we are trying to contribute to solving the social issues we face, such as the creation of a carbon-neutral society. Our challenge with NanoTerasu will be described in detail.

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  • Shun-ichiro OHMI
    2024 Volume 93 Issue 1 Pages 12-18
    Published: January 01, 2024
    Released on J-STAGE: January 01, 2024
    JOURNAL RESTRICTED ACCESS
    Supplementary material

    In this article, non-volatile memory transistors utilizing Hf-based ferroelectric thin films are described. Ferroelectric-gate transistors, MFSFET (Metal-Oxide-Si Field-Effect Transistor), are explained utilizing ferroelectric HfO2 and HfN thin films which are able to be formed directly on the Si substrate as a gate insulator. Furthermore, FeNOS-type non-volatile memory transistors that is the MONOS (Metal-Oxide-Nitride-Oxide-Si)-type flash memory with ferroelectric HfO2 thin films which realizes the precise threshold voltage control utilizing polarization and charge trap characteristics are explained.

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Recent Developments
  • Kosuke MITARAI
    2024 Volume 93 Issue 1 Pages 19-23
    Published: January 01, 2024
    Released on J-STAGE: January 01, 2024
    JOURNAL FREE ACCESS

    In recent years, the rapid advancements in machine learning have significantly influenced its broader application within society. Concurrently, the prospects of utilizing the computational strengths of quantum computers for machine learning have been a focal point since the 2010s. As quantum hardware continues to evolve, there's a notable shift towards crafting algorithms specifically for the current and near-future quantum systems. This article offers a concise overview of machine learning as facilitated by quantum computing.

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