We have performed annealing of double P
+ ion implanted GaAs layers using short-duration laser irradiation (within less than one second) on a small region of 1μmφ. The induced damages have been evaluated by RBS-channeling technique and micro-Raman scattering measurements as functions of ion dose and dose rate. The annealing behavior has been investigated also by the Raman scattering measurements as a function of annealing time, ion dose and dose rate. From characteristics of laser annealing, the ion dose are roughly classified into four regions. In the case of low doses (Φ≤2x10
12P/cm
2, stageI) crystallinity is recovered almost perfectly, while in the case of high doses (10
14P/cm
2≤Φ≤10
15P/cm
2, stageIII) crystallinity is nearly recovered by laser solid phase epitaxy. On the other hand, in the case of intermediate region (2x10
12P/cm2 _??_ Φ _??_ 10
14P/cm
2, stageII) and very high dose region (Φ _??_ 10
15P/cm
2, stageIV), recovery is worse and the recovery process is somewhat complicated. It is found that the recovery of crystallinity strongly depends on the ion dose rate for the intermediate dose region. It is also demonstrated that short-duaration laser annealing is useful for implanted GaAs and that ion dose rate is very important parameter for the laser annealing.
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