IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
Volume 143, Issue 2
Displaying 1-9 of 9 articles from this issue
Paper
  • Teppei Kawaguchi, Tatsuya Sakoda, Takeshi Nishimura
    2023 Volume 143 Issue 2 Pages 46-53
    Published: February 01, 2023
    Released on J-STAGE: February 01, 2023
    JOURNAL RESTRICTED ACCESS

    We investigate the influence of electric field in a void of epoxy resin with fillers on development of electrical trees. Not only observations of pits and electrical trees but also measurements of temporal variations of the number of partial discharges (PDs) and the PD magnitude were carried out. It was found that PDs with several hundred pC can be measurement by a CT sensor until the obvious formation of an electric tree is achieved in the case of epoxy resin without fillers. Additionally, when electric field of the tip of a pit is the almost same as the withstand electric field of the epoxy resin, electrical tree and breakdown occur in a very short time. The development of electrical tree is disturbed by fillers in epoxy resin, and the required time for breakdown is much longer than that of epoxy resin without fillers.

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  • Hideo Wada, Taito Fukawa, Kazuaki Toyota, Masatoshi Koyama, Nobuya Hir ...
    2023 Volume 143 Issue 2 Pages 54-62
    Published: February 01, 2023
    Released on J-STAGE: February 01, 2023
    JOURNAL RESTRICTED ACCESS

    This paper describes the deposition of Nb doped vanadium dioxide (VO2) films on a glass substrate by metal organic decomposition (MOD) and their thermochromic properties. The difference in thermochromic properties of VO2 thin films on a glass substrate was investigated with and without a buffer layer of Hf0.5Zr0.5O2 (HZO). The phase transition temperature of VO2 thin film successfully reduced from 83 to 43℃ on a glass substrate with a buffer layer of HZO. Without a buffer layer of HZO, the thermochromic properties of VO2 thin films deteriorated comparing with a buffer layer of HZO. HZO buffer layer effectively suppresses the miniaturization of VO2 crystallite size of thin film due to Nb doping. Moreover, it would block out the diffusion of Al, Na and Ca impurity ions from a glass substrate and the partial oxidation of VO2 thin films judging from XPS O1s spectra and XPS depth profile analysis. We conclude that the insertion of the HZO buffer layer is a useful technique for controlling the transition temperature of VO2 for the smart window applications by MOD.

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