IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
Volume 138, Issue 9
Displaying 1-10 of 10 articles from this issue
Paper
  • Kenji Sasamori, Hiroyuki Hama
    2018Volume 138Issue 9 Pages 449-456
    Published: September 01, 2018
    Released on J-STAGE: September 01, 2018
    JOURNAL FREE ACCESS

    Gas-insulated switchgear (GIS) has been widely applied since 1968 in Japan due to the compactness and high reliability, and has the brilliant history during this half century. This paper is the second report of GIS history following the first one which described the transition of technological development and practical application. The second report mainly deals with the wide spread and enlargement of GIS application from the middle of 1970s to the end of 1980s. First, progress of GIS construction such as three phase enclosed and combined GIS, and basic technologies which allowed these progress are mentioned. Secondly, downsized and improved performance of GIS equipment including GCB and MOSA are explained, and typical examples of GIS application which reflected these technical progress are introduced. Finally, the authors try to discuss the differences between domestic and overseas GIS technologies in terms of the downsizing process, and mention how these technologies and products in the second stage brought impacts on the next technologies and progress of GIS in 1990s.

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  • Tatsuya Sakoda, Hibiki Horie, Amane Takei, Katsutaka Kubo, Manabu Mizu ...
    2018Volume 138Issue 9 Pages 457-462
    Published: September 01, 2018
    Released on J-STAGE: September 01, 2018
    JOURNAL FREE ACCESS

    Surge arrester with a spark gap has been installed for protecting electric power apparatus from lightning surge in Japanese distribution system. A high - stable discharge characteristic is desirable by shorting the discharge time lag for the spark gap. The top and the bottom face of a ceramic spacer for sustaining the spark gap in a surge arrester contact with electrodes, of which the electric field becomes high. In this study, we performed V-t tests by applying the impulse voltage of 20-42 kV with 1.2/50 µs and measured the number of electrons per unit time against some spark gaps which differed in relative dielectric constant of a ceramic spacer. The higher relative dielectric constant contributed on raising electric field and forming corona discharge at the bottom face of the ceramic spacer, which increased the number of electrons and shortened the discharge time lag.

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  • Hiroaki Kamohara, Yoshinori Kudo, Yoshiyasu Ehara
    2018Volume 138Issue 9 Pages 463-470
    Published: September 01, 2018
    Released on J-STAGE: September 01, 2018
    JOURNAL FREE ACCESS

    With XLPE cable of 11 kV or less, dielectric breakdown is considered to occur during operation with a bridged water tree, and it is considered that with XLPE cable of 22 kV or more, dielectric breakdown occurs during operation with unbridged water tree. Various voltage characteristics of low frequency loss current of 6.6 kV XLPE cable with different degradation are measured this time. As a result, it was confirmed that the low frequency loss current of the thermal degradation cable conforms to the Ohm’s law, and the low frequency loss current of the water tree degradation cable shows a peculiar electric field dependency. Moreover, we could also confirm the difference in characteristics between the bridged water tree degradation cable and the unbridged water tree degradation cable.

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  • Kohei Maeda, Van Nhu Hai, Kunio Nishioka, Akihiro Matsutani, Takashi T ...
    2018Volume 138Issue 9 Pages 471-477
    Published: September 01, 2018
    Released on J-STAGE: September 01, 2018
    JOURNAL FREE ACCESS

    VOx thin films were fabricated on Si3N4/SiO2/Si substrates by firing precursor films, which were fabricated by metal-organic decomposition (MOD), with a reduced pressure. Resistance-temperature (R-T) characteristics of the films indicating the phase transition from metal to insulator with about 4 orders of resistance change specified with VO2(M) were obtained. Furthermore, the films fabricated with a firing temperature of 580 ∼ 600 ºC had temperature coefficient of resistance (TCR) of -2.8 ∼ -2.9 %/K at room temperature. After fabricating VOx microbolometers with 40×10 µm2 using the films on Si3N4/SiO2/Si substrates, Si with a thickness of about 340 µm was etched using Deep-RIE and XeF2 vapor etching from the backside of the substrate. Then, the VOx microbolometer was completed on Si3N4/SiO2 membrane. The VOx microbolometer on Si3N4/SiO2 membrane had a high DC sensitivity of 2310 W-1, which was about 15 times higher than that of the microbolometer on the Si3N4/SiO2/Si substrate.

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