Co/Cu multilayers were prepared by rf sputtering with and without the substrate bias voltage
VB= -30 V. X-ray diffraction indicated that the layer boundaries of -30 V biased films become sharper and the orientation of (111) planes becomes better than those of the films of 0 V bias voltage. In the films of 0 V bias, the MR ratio increases monotonically with Cu layer thickness,
dCu, up to about 40 Å and then decreases. On the other hand, in the films of -30 V bias the MR ratio changes oscillatory with
dCu, and the peaks appeared at
dCu =23, 36 and 48 Å. The maximum MR ratio was obtained for the structure of [Co(15.1 Å) / Cu(24.3 Å)]
30/Cu(50 Å) and the value was 13.1% at room temperature and 17.0% at 110 K. In this film, the interlayer coupling strength
J was very small, 0.008 erg/cm
2. Then the sharpness of the MR change,
ΔR/R(
Hs)·
ΔH, was very large 2.2 kOe
-1. The different
dcu dependence for -30 V biased film from 0 V film was considered to be originated from the different quality of layer boundaries. The extraordinary Hall effect and the planer Hall effect are discussed.
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