This paper describes in-process measurements of secondary electron emission coefficient (SEEC) during plasma immersion ion implantation for a plane target. In the plane target, trajectories of secondary electrons (SEs) emitted from the target strongly depends on the plasma conditions as well as amplitude of pulse voltages applied to the target because of variation of a curvature radius of the sheath formed around the target. Therefore, absolute measurements of the SE current as well as of the SEEC were difficult to be performed. However calibration of a SE detector using a plane target with very high SEEC enabled the SEEC measurements. The measurements of the SE current revealed that the sheath curvature was affected by the plasma condition and the target shape. This calibration will be useful for SEEC measurements of arbitrary-shaped target.

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By use of the Photonic Band Gap in the photonic crystal, the foundamental waveguide structures for the light wavelength range have been developed. Based on the fine structure of these ones, many functional devices have been proposed by the analytical or the numerical simulation methods and the experiments of the traial manufacture. In this paper, the treatment of chiral dielectric in the Condensed Node Spatial Network for the vector potential is explaiend, and we show the polarization plane rotation property in air-hole and pillar type photonic crystal waveguide structures with the chiral medium substrate. Then, we show the fundamental advantage of the air-hole type photonic crystal waveguide structure in application to a mode converter.

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A highly accurate, guarded series-resistors-type voltage divider has been developed for measuring direct voltages of the range of 10 V to 1000 V. A divider consists of wirewound bobbin resistors which are installed in a temperature regulated oil bath and supplied with 1 mA constant current by the 1000 V of a calibrator. The voltage ratios are determined by a self-calibration technique using 10 V and 100 V reference voltages. Typical relative uncertainty is several parts per 10⁷ for self-calibration of voltage ratio of 1000 V to 10 V. A comparison of the voltage ratio calibrations between this system and that of National Metrology Institute of Japan showed a reasonable agreement.

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“Electromagnetic Interference (EMI)" has become serious problems as development of the digital technology in downsizing in devices and performing high-speed operation. In the EMI problem such as Electro-Static Discharge (ESD), not only the solenoidal field from currents but also the non-solenoidal field due to charges are included. For this problem, the combined numerical analysis of both fields in the three-dimensional space and on the time domain is inevitable. I have already proposed the condensed node Spatial Network Method for the vector and scalar potential fields based on the gauge condition. In this paper, the fundamental field properties near the changing charges including both charging and discharge processes are presented by the method.

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To obtain a rectilinearly channelled surface discharge under atmospheric condition, a needle - thin film - knife edged electrode system was used and a negative impulse voltage to the needle electrode was applied .
The rectilinearly channelled discharge is quite different from the well-known surface discharge. Contrary to the well-known surface discharge, the negative polarity is much longer than that of the positive one and the discharge channel looks like a leader.
The propagation model of the rectilinearly channelled negative surface discharge that consists of a diffusion-type nonlinear partial differential equation and the boundary conditions are summarized. The nonlinear diffusion equation is solved by assuming the applied voltage is constant and using the moving boundary conditions which are the continuity condition of the electric charge and the propagation speed condition. As the result of discussion of the moving boundary conditions we assumed the potential at the channel tip is constant.
In this paper, the propagation phenomena of the channel and the influence of the waveform to the propagation parameters in case of the impulsive voltage are discussed.

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A pulsed ion-beam evaporation method (IBE) has been applied to prepare hafnium silicate (Hf-Si-O) thin films which is one of promising gate dielectrics for metal-oxide-semiconductor (MOS) transistor instead of SiO₂. Here, the IBE has a potential to make films containing less impurities due to the ablation of pure hafnium oxide (HfO2) targets in vacuum, while the chemical vapor deposition (CVD) precursor leaves its constituents in the films. From microstructural observation, the thin film consists of two layers; the upper and lower layers. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses reveal that the upper layer is polycrystalline HfO₂ and that the lower layer is amorphous hafnium silicate. It may be understood that the hot Hf-O plasma impinging on the Si substrate resulted in the reaction of Si and Hf-O to prepare the Hf-Si-O thin film. The energy given by the intense pulsed ion beam makes it possible to induce such a surface reaction. The film has been found to be uniform distribution of Hf and O in the depth. Content of impurities such as carbon incorporated from the environment into the film are lower than the detection limit of XPS.

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The measurement of the iron loss in ferrites is an important work for developing high efficiency switching power supplies. The authors have proposed the dynamic magnetic loss parameter, λ_f, for evaluating the iron loss in ferrites. In the previous studies, the parameter was assumed to be a constant value for an individual ferrite material and defined for one period of a small B-H loop. In this paper, assuming that λ_f is a function of the time derivative of the magnetic flux density, dB/dt, a novel measurement method of λ_f of a Ni-Zn ferrite is proposed using rectangular wave voltage excitation and the Fourier expansion of the exciting current. In order to realize an iron loss measurement system with the rectangular wave voltage excitation, a high frequency FET inverter has been developed. The results of measuring λ_f show that it is uniquely determined by dB/dt regardless of B-H loop size. The measured dB/dt characteristics of λ_f are applied to practical examples for switching power supplies and sinusoidal wave voltage excitations. Their experimental and computational results coincide and it is clarified that the measured dB/dt characteristics are effective and useful.

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Mechanical properties of the film deposited by the sputtering method, such as the adhesion, hardness, friction coefficient, and internal stress, are one of important characters. In this study, to clarify the relationship between the mechanical properties and microstructure and to control the mechanical properties of the film deposited by the sputtering method, adhesion, hardness, friction and internal stress of permalloy films deposited by facing target sputtering were investigated. The adhesion of the film could be improved by an increase in sputtering gas pressure and introducing the ion bombardment to the film surface during sputtering. Hardness of the film was decreased as the sputtering gas pressure was decreased and ion bombardment to the film surface was enhanced, where the crystallinity of the film was improved. Film stress can be controlled by controlling the sputtering gas pressure and the amount of the ion bombardment. The relationship between the stress and the adhesion was not observed, and friction coefficient of the film was changed little with sputtering conditions.

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The spreading use of polymer insulating materials in environments such as space and nuclear power stations increases the concern about the reliability of electrical insulation in these environments due to radiation and atmospheric pressure effects on the surface breakdown of polymers. This paper describes the effects of atmospheric pressure and gamma-ray irradiation on the discharge characteristics. The experiment was carried out by applying dc pulse voltage under a decreased pressure. Polyphenylene Oxide which was irradiated in air up to 100kGy and 1MGy with dose rate of 10kGy/h using a ⁶⁰Co gamma-source has been used as the test sample. The total dose of gamma-ray irradiation effects on the discharge quantity have been studied. The changes of discharge quantity is discussed with decreasing the atmospheric pressure in the range from 100kPa to 0.1kPa and the frequency of applied pulse voltage in the range from 100Hz to 200Hz. The results show that discharge quantity increased with increasing the total dose of gamma-ray irradiation, and decreased with decreasing the atmospheric pressure. It is found that discharge quantity increased with increasing the frequency of applied pulse voltage. We found the dielectric breakdown is easy to occur with increasing total dose of gamma-ray irradiation, and the dielectric breakdown is hard to be allowed under decreased pressure.

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Degradation diagnosis is aimed at preventing unexpected failure and extending the service life of electric power apparatuses. It is, however, necessary to investigate the economic feasibility of degradation diagnosis, because the life-cycle cost of cable maintenance changes with the diagnostic parameters such as diagnosis cost, diagnosis interval and replacement criterion. In this paper, based on the actual data of water-tree degradation, we proposed a method of life-cycle-cost evaluation and evaluated the economic effect of degradation diagnosis. We also discussed the economic feasibility of practical nondestructive diagnosis of 6.6 kV XLPE cable, i. e. DC leakage current measurement and residual charge measurement, and compared the economic effects of these methods. As a result, the residual charge measurement is economically feasible and has higher effectiveness than the DC leakage current measurement.

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In the present paper, simulations of photoresist pattern during proximity exposure, using measured values for the dissolution rate in the photoresist, are reported. We adopted the van Cittert-Zernike theory and Hopkins equation as a model of the radiation intensity distribution in photoresist during proximity exposure, and used a film thickness measurement system to measure the film thickness of photoresist during development as a means of determining the dissolution rate. The results of simulations pattern were then compared with SEM observation results to examine the validity of this method.
As experiments to corroborate the validity of this simulation method, a diazonaphthoquinone (DNQ)-novolac positive thick-film resist (hereafter referred to as “thick film resist") was used in patterning with a broad-wavelength (350 nm to 450 nm) mask aligner, and SEM observations were performed. In addition, simulations were conducted, and the resulting shapes were compared. Agreement was observed between the SEM observation results and the simulation results, and the differences in shapes for rough pattern dimensions and for fine pattern dimensions could be calculated. This indicates the validity of the proposed method.

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Photoluminescence and surface plasmon emission light have been investigated in the attenuated total reflection (ATR) Kretschmann configuration. Surface plasmons (SPs), two-dimensional optical waves, were excited when rhodamine-B (RB) dye Langmuir-Blodgett (LB) films on metal thin film were directly irradiated by laser beams in the Kretschmann configuration. Emission light, that is, three-dimensional optical waves through the prism were observed corresponding to the resonant conditions of SP excitations in the configuration. The intensity of the SP emission light was small for the RB LB film with 4 layers, but the intensities increased in proportion to the thickness for the LB films having above 8 layers. Photoluminescence intensities also strongly depended upon the nanostructured separation between the RB LB films and metal thin films. It is thought that the phenomena are very useful for applications utilizing dye molecules on metal and conversion between three- and two-dimensional optical waves.

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