Amorphous-forming regions in the RF-sputtered SiO
2-ZrO
2 films determined by X-ray diffraction were in the range 0-70mol%ZrO
2 under sputtering power 50W, sputtering time 15h and in the range 0-68mol%ZrO
2 under sputtering power 100W, sputtering time 25h with Ar/O
2=3 atmosphere. Crystallization temperatures,
TC, measured by DTA on the sputtered films decreased with increasing ZrO
2 content. From the liquidus temperature,
TL, of the system the thermal stability of the sputtered films was evaluated in terms of
TC/
TL ratio, which means the amorphous-forming ability, ability of the system to form an amorphous phase.
TC/
TL ratio decreased with increasing ZrO
2 content from 0.81(0mol%ZrO
2) to 0.36 (69.1mol%ZrO
2) in the sputtered films. Gels of the SiO
2-ZrO
2 system were prepared from Si(OC
2H
5)
4 and Zr(OC
3H
7)
4 ethanol solution with or without water addition in the range 0-100mol%ZrO
2.
TC was measured on dried and calcined gels by DTA. The thermal stability,
TC/
TL, of gels was found to decrease from 0.77(0mol%ZrO
2) to 0.23 (100mol%ZrO
2). The compositional dependence of
TC/
TL ratios of gels was almost comparative with those of the sputtered films, implying that amorphous-forming ability is intrinsic to the system.
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