Effects of sintering additives on mechanical and electrical properties of Gd-doped barium titanate ceramics have been studied by measuring their electrical resistivity, bending strength, and ESR spectra. The bulk density of the sample prepared by sintering at 1100°C with small amounts of BaB
2O
4 doped as sintering aids was as high as 90% of the theoretical value. Semiconducting BaTiO
3 was obtained by sintering the BaB
2O
4-doped samples at 1100°C. The electrical resistivity of the 3mol% BaB
2O
4-doped sample sintered at 1100°C was the lowest in all samples and its PTCR jump was more than 4 orders of magnitude. In addition, the bending strength of the sample was the highest in all samples and the value was close to that of the sample sintered at 1380°C without sintering additives. The line width of the ESR signal of Gd
3+ observed in the sample sintered at 1100°C with BaB
2O
4 was almost equal to that in the sample sintered at 1380°C without sintering additives. The result showed that in the samples doped with BaB
2O
4 as a sintering aids, Gd
3+ ions were dissolved uniformly in BaTiO
3 grains at a sintering temperature of 100°C.
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