An x-ray stress measuring method for a single crystal is proposed. This method can be applied to a orthorhombic single crystal having
x, y and
z crystal symmetry planes, the
x-y plane being the specimen surface. In the plane stress state, residual stresses σ
0x and σ
0y can be determined using slopes
M and
M' of sin
2ψ diagrams for the
x and
y measurement directions. Various stresses σ
a were applied to a silicon single crystal wafer specimen in longitudinal (
x) direction using a four points bending loading device, and the peak positions of different diffraction planes were measured in the
x and
y directions by x-ray diffraction method. The measured peak positions of diffraction planes were plotted in the sin
2ψ diagram for various applied stresses σ
a. Although the peak positions of different planes in the sin
2ψ diagram deviated from the straight lines determined by the least squares method, the straight lines crossed at a point, and the slopes and intercepts of the straight lines varied linearly with the applied stress σ
a. The peak positions for a fixed ψ angle varied proportionally to the applied stress σ
a, and the measured proportionality constants
ki and
k'i in the
x and
y directions, respectively, almost agreed with the theoretical values.
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