AlO
x thin film is one of the most promising high dielectric constant (High-k) materials. AlO
x thin films were grown by mist CVD using a solution-based fabrication technology operated even under atmospheric pressure. This method is highly suitable due to easy configuration, low cost and environmental friendly operations. This report demonstrates significant improvements in the quality of AlO
x thin films by O
3 incorporation. AlO
x thin films were grown above 400°C with breakdown field (
EBD) over 6 MV/cm, static dielectric constant (
κ0) over 6, and dynamic dielectric constant (
κ∞) around 3. On the other hand, O
3 assisted AlO
x thin films were grown above 340°C with
EBD over 8MV/cm,
κ0 over 7, and
κ∞ over 3. This work demonstrates that the quality of AlO
x thin films could be significantly improved using O
3 incorporation. AlO
x thin film properties and its degradations were controlled by the OH(-AlO
x) residual bonding. High quality AlO
x thin films were grown at the temperature range from 400°C to 340°C by controlling OH(-AlO
x) bonding decomposition with O
3 incorporation.
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