Taikabutsu
Online ISSN : 2759-3835
Print ISSN : 0039-8993
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Volume 67, Issue 6
Taikabutsu Vol.67 No.6　June　2015
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  • Fabrication of Thick HfO2 Porous Coating Layer on Polycrystalline SiC Substrate by Polymer-assisted Sol-gel Process and Supercritical Drying
    Takaya AKASHI,, Yosuke KATSUYAMA, Keiichiro MATSUSHIMA
    2015 Volume 67 Issue 6 Pages 276-280
    Published: June 01, 2015
    Released on J-STAGE: May 01, 2024
    DOIhttps://doi.org/10.60431/taikabutsu.67.6_276
    JOURNAL RESTRICTED ACCESS
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    For improvement of resistance to active oxidation of SiC, a thick porous HfO2 films were coated on polycrystalline SiC substrate by a sol-gel coating technique. HfO2 precursor solution with polymer addition was dip-coated on sintered SiC substrate, dried in supercritical CO2 under 10 MPa at 300℃, and fired stepwise at 300℃, 400℃, and 550℃ in air. The polymer addition in precursor solution decreased the temperature where monoclinic HfO2 particles formed, and inhibited the crack formation in the HfO2 film after supercritical drying and subsequent firing. The obtained HfO2 film had porous structure with a thickness of 700 nm, which was 3.5 times greater than that of a film without supercritical CO2 drying. Active oxidation of SiC porous material in flowing Ar gas was retarded by the thick porous HfO2 coating.
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