In the previous paper, (this jour.), the relative positions of energy level, E
1, E
2, E
3 and E
4, in Cu, were determined from X-ray spectrum. In the present work, the above results were compared with the photoelectric effects and the light absorption in its thin film, and the results are as shown in the following table; similar results had previously been already obtained for Zn.
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From these results it was inferred that the threshold energies in the photoelectric effect for (100) and for (111), of Cu, are equal to the energy distances E
2-E
4 and E
2-E
3, respectively. Further, the result above inferred, was combined to the experimental result obtained by T. Fukuroi, saying that the threshold energy of fhe photoconductive effect of the thin film of metals, Zn, Cd and Hg, is equal to that of the ordinary photoelectric effect for the same element, it was inferred that, the high resistivity of the thin film of metals comes from the fact that, in such a film, the levels, E
3 and E
4 are rarely occupied by electrons while E
1 and E
2, constantly; accordingly E
3 and E
4 are conduction levels but not E
1 and E
2. Furthermore, it was taken as that, the thin surface layer of bulk mass of a metal has a similar electronic structure as above described. So, when the exciting energy amounts to its threshold value, the electron in E
2 is elevated to E
3 or E
4 in both cases; and there occcurs electric conduction in the thin film, and photoelectron emission, from the surface layer of the bulk mass, of the metal. Therefor it was concluded that the mechanism of the releasing of electron from the level, E
3 or E
4, is the same in both cases, and so also in the case of electric conduction within the bulk mass of metals, asserting that, it is no other than the authoionization which is well observed in free atoms and in free molecules. Accordingly that within the bulk mass of Cu, valency electrons are in E
1, E
2, E
3, and E
4; but in its thin surface layer, E
3, E
4 are rarely and E
1, E
2 constantly, occupied by electrons.
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