This study was performed to establish a method for producing so-called "Futomoyashi" or highquality thick bean sprouts by improving cultivation method. Intermittent short time treatments with artificial sunlight (Asl: 500, 2500, 5000, and 10000 lux), ethylene (C
2H
4: 10, 50, and 100ppm), and carbon dioxide (CO
2: 400, 600, and 800ppm) were done singly or combinedly (2500lux Asl+50ppm C
2H
4, 2500lux Asl+600ppm CO
2, and 50ppm C
2H
4+600ppm CO
2), and the effects of these treatments on the growth of bean sprouts and on the generation of ethylene and carbon dioxide were examined. Single intermittent treatments with these three agents, when performed at appropriate levels, produced similar effects on the growth of bean sprouts. To clarify the relationships between these agents, the rates of ethylene and carbon dioxide generated from the bean sprouts by single treatments were measured. (The treatments were done as described previously.) It was revealed that under intermittent treatments artificial sunlight stimulated the production of ethylene and carbon dioxide, ethylene increased the generation of carbon dioxide, and carbon dioxide enhanced the production of ethylene. Within the range from 500lux to 10000lux, artificial sunlight increased the generation of carbon dioxide and ethylene as light intensity increased. At 50ppm, ethylene gave the greatest stimulus to carbon dioxide production by bean sprouts. Treatment with carbon dioxide resulted in the greateat increase in ethylene generation at 400ppm in the both soybean and mung bean sprouts and at 800ppm in adzuki bean sprouts. It can be concluded from these results that treatments with artificial sunlight and carbon dioxide effect the growth of bean sprouts under the stimulus of ethylene production. And thus the mechanisms of effects of these three treatments on the growth of bean sprouts are fundamentally the same.
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