A study has been made of the luminescence during Ar-ion bombardment to Ce-implanted α-Al
2O
3. Ion implantation of Ce
+-ions into α-Al
2O
3 was performed at an energy of 100keV with doses ranging from 5×10
13 to 1×10
16 Ce/cm
2 close to room temperature. After ion implantation, the implanted specimens were annealed in an argon gas atmosphere at 400, 600 and 1000°C for 1 hour. Luminescence spectra were measured during 100keV Ar
+-ion bombardment of the specimens via a spectrometer with three optical filters, two diffraction gratings and a photomultiplier. The luminescence spectrum for a non-implanted specimen has peaks near 340, 390 and 420nm, which correspond to defects in the α-Al
2O
3 itself. The main peaks of the luminescence spectra emitted from Ce-implanted specimens also appear near 340, 390 and 420nm. The peak intensity at 340nm decreases as the dose increases. The peak intensities at 390 and 420nm increase at doses ranging from 5×10
13 to 2×10
14 Ce/cm
2 and decrease over a dose of 2×10
14 Ce/cm
2. Annealing causes the peak intensity to increase. Comparing the luminescence spectra after annealing of non-implanted and implanted specimens, the peak intensity at 340nm is higher for non-implanted specimens than Ce-implanted ones. In contrast, peak intensities at 390 and 420nm are higher for Ce-implanted specimens than for non-implanted ones. From the results, it is considered that Ce-implantation effects of luminescence appear at peaks of 390 and 420nm.
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