Journal of The Surface Finishing Society of Japan
Online ISSN : 1884-3409
Print ISSN : 0915-1869
ISSN-L : 0915-1869
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Volume 67, Issue 4
Displaying 1-12 of 12 articles from this issue
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Special Feature / Innovative Plating Technologies
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Research Papers
  • Development of Manganese Plating Bath Suitable for the Fine Pattern Formation
    Toshihisa YODA, Hitoshi KONDO, Nobuyuki ZETTSU, Katsuya TESHIMA
    2016 Volume 67 Issue 4 Pages 211-216
    Published: April 01, 2016
    Released on J-STAGE: April 03, 2017
    DOIhttps://doi.org/10.4139/sfj.67.211
    JOURNAL FREE ACCESS
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    This work systematically examined the development of a new plating bath for fine-patterned manganese electrochemical deposition on an organic substrate under various conditions. Hull cell tests, potentiodynamic scans, and galvanostatic experiments conducted with widely diverse pH and current densities revealed that CyDTA played a critical role as a pH buffer in the formation of fine-patterned manganese films. Optimized plating conditions enabled the formation of fine-patterned manganese electrochemical deposits of 10 μm squares with 20 μm pitch.
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  • Study on Etching Characteristics of Contacting Copper and other Metals by Sulfuric Acid Solution Containing Thiourea
    Daisaku AKIYAMA, Sumio AISAWA, Jing SANG, Hidetoshi HIRAHARA
    2016 Volume 67 Issue 4 Pages 217-221
    Published: April 01, 2016
    Released on J-STAGE: April 03, 2017
    DOIhttps://doi.org/10.4139/sfj.67.217
    JOURNAL FREE ACCESS
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    Using a sulfuric acid solution containing thiourea was investigated for selective and equivalent etching of copper in contact with dissimilar metals: Sn, Ni, Fe, and Zn. The copper electrode potential was dropped with increasing thiourea concentration. In contrast, the potentials of the other metals （Sn, Ni, Fe, Zn） exhibited upward trends with increasing thiourea concentration. Each metal, except for Zn, showed a potential crossing point with copper at a certain thiourea concentration depending on the metal. Copper was etched selectively at thiourea concentrations higher than the potential crossing point. Copper and the other metals were etched equivalently around the potential crossing point. The thiourea concentration of the potential crossing point was increased concomitantly with increasing metallic ion concentration. Results show that the etching rates of contacting copper and the other metal were controlled arbitrarily by adjusting the thiourea concentration. The thiourea concentration must be strictly controlled to establish a sustainable selective or equivalent etching system.
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