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Kazuo FURUYA
2002 Volume 53 Issue 12 Pages
788-792
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Masahito SATO
2002 Volume 53 Issue 12 Pages
793-800
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Takayuki HOMMA, Hideo HONMA
2002 Volume 53 Issue 12 Pages
801-805
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Hideyo KODAMA, Mitsuo HAYASHIBARA, Yuuzou KOZONO
2002 Volume 53 Issue 12 Pages
806-811
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Manabu TAKEUCHI
2002 Volume 53 Issue 12 Pages
812-817
Published: December 01, 2002
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Shigeaki ZAIMA, Yukio YASUDA
2002 Volume 53 Issue 12 Pages
818-822
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Itsuko SAKAI, Tokuhisa OHIWA, Makoto SEKINE
2002 Volume 53 Issue 12 Pages
823-827
Published: December 01, 2002
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Junji INUKAI, Kingo ITAYA
2002 Volume 53 Issue 12 Pages
828-834
Published: December 01, 2002
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Sachiko ONO
2002 Volume 53 Issue 12 Pages
835-838
Published: December 01, 2002
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Toshiaki SUZUKI, Noriaki ENDO, Masateru SHIBATA, Seiji KAMASAKI, Takeo ...
2002 Volume 53 Issue 12 Pages
839-842
Published: December 01, 2002
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Takeshi YAMAUCHI, Ryonosuke TERA, Yutaka HATTORI, Nobuei ITO
2002 Volume 53 Issue 12 Pages
843-846
Published: December 01, 2002
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Kiyomi EJIRI, Shinji SAITO, Mikio TOMARU
2002 Volume 53 Issue 12 Pages
847-851
Published: December 01, 2002
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Hideyuki OHTSUKA, Yuichi SATO
2002 Volume 53 Issue 12 Pages
852-856
Published: December 01, 2002
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Kazuo TAKAHASHI, Takashi MITAMURA, Kouichi ONO, Yuichi SETSUHARA
2002 Volume 53 Issue 12 Pages
857-859
Published: December 01, 2002
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Masaru HORI, Toshio GOTO
2002 Volume 53 Issue 12 Pages
860-862
Published: December 01, 2002
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Hirofumi TAKIKAWA
2002 Volume 53 Issue 12 Pages
863-864
Published: December 01, 2002
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Atsushi TAKEDA, Chihiro KAITO
2002 Volume 53 Issue 12 Pages
865-867
Published: December 01, 2002
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Simple Lithography Technique for Nano-Scale Pattern
Akihiro MIYAUCHI, Kousuke KUWABARA, Mitsuru HASEGAWA, Takao MIWA
2002 Volume 53 Issue 12 Pages
868-870
Published: December 01, 2002
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Hideki MASUDA
2002 Volume 53 Issue 12 Pages
871-874
Published: December 01, 2002
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Tetsuji HIRATO
2002 Volume 53 Issue 12 Pages
875-877
Published: December 01, 2002
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Preparation and Evaluation
Shigehiko FUJIMAKI, Yuichi KOKAKU
2002 Volume 53 Issue 12 Pages
878-880
Published: December 01, 2002
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Mitsuru SADAMOTO
2002 Volume 53 Issue 12 Pages
881-883
Published: December 01, 2002
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Mamoru KOHATA
2002 Volume 53 Issue 12 Pages
884-886
Published: December 01, 2002
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Hideya YOSHITAKE, Tatsumi ISHIHARA, Masaki YOSHIO
2002 Volume 53 Issue 12 Pages
887-889
Published: December 01, 2002
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Takuya KOMODA
2002 Volume 53 Issue 12 Pages
890-893
Published: December 01, 2002
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New Alignment Method for Liquid Crystal
Atsushi KUMANO
2002 Volume 53 Issue 12 Pages
894-896
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Azusa SHIDA, Masanobu FUTSUHARA, Hiroyuki SUGIMURA, Osamu TAKAI
2002 Volume 53 Issue 12 Pages
897-898
Published: December 01, 2002
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Takeo KAMINO, Toshie YAGUCHI, Mitsuru KONNO, Takahito HASHIMOTO, Hidem ...
2002 Volume 53 Issue 12 Pages
899-901
Published: December 01, 2002
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Yuko UENO
2002 Volume 53 Issue 12 Pages
902-905
Published: December 01, 2002
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Masaharu KOMIYAMA
2002 Volume 53 Issue 12 Pages
906-908
Published: December 01, 2002
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Hiroshi MURAMATSU, Jong-Min KIM
2002 Volume 53 Issue 12 Pages
909-911
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Naoki MATSUDA, Takamitsu YOSHIDA, Hajime ASANO, Jose H. Santos, Zhi-me ...
2002 Volume 53 Issue 12 Pages
912-914
Published: December 01, 2002
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Mikka NISHITANI-GAMO, Kiyoharu NAKAGAWA, Yafei ZHANG, Keishin OTA, Hid ...
2002 Volume 53 Issue 12 Pages
915-919
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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A novel synthesis of high density aligned carbon nanotubes in the liquid-phase has been demonstrated. Carbon nanotubes have been grown on Si substrate in methanol, and other alcohols by using Fe catalyst. Hollow multiwall carbon nanotubes external diameters ranging from 6 to 26nm standing well on the Si substrate were obtained. The growth rate of carbon nanotubes was∼several microns per minutes. The large difference in temperature between the substrate surface and the liquid can cause very high nucleation density and high growth rate and affect the growth direction of the carbon nanotubes. Very few amorphous components was produced among the carbon nanotubes because reaction proceed only on the hot substrate and no reaction can proceed in the liquid phase. This simple method can promise to give a large scale production of the carbon nanotubes.
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Satoshi OUE, Hiroaki NAKANO, Shigeo KOBAYASHI, Tetsuya AKIYAMA, Hisaak ...
2002 Volume 53 Issue 12 Pages
920-925
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Electrolytic production of Zn-Al
2O
3 composite coatings was tried in sulfate solutions containing Zn
2+ and Al
3+ ions by codepositing Al
3+-compound formed due to pH rise in the cathode layer. The results obtained are as follows:
(1) The Zn-Al oxide composite was obtained under the conditions that hydrogen evolution was significantly accelerated by the suppression of Zn deposition. Addition of stearyle benzyl ammonium chloride (C-18 benzyl) to the baths was effective for an increase in Al content in the deposit and Al was codeposited in trivalent state in the deposits;
(2) The partial polarization curves of Zn were shifted to the less positive direction due to the suppressed rate of Zn deposition by additive C-18 benzyl
(3) X-ray diffraction patterns of the deposited composites showed that the Al
3+-compound that existed in the deposits was θ-Al
2O
3(4) TEM observation revealed that the codeposited Al
2O
3 with a small size of 10 to 100nm was homogeneously dispersed in the deposits.
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Fumikazu MIZUTANI, Sachie TAKEUCHI, Hiroshi TAKAHA, Makoto UE, Kiyoshi ...
2002 Volume 53 Issue 12 Pages
926-932
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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In mixed solutions of ethylene glycol and water, Al-Nd alloy films were anodized at 1mA cm
-2 up to 100V. Al-10wt.% Nd and Al-3wt.% Nd sputtered films were used as substrates, and electrolytes containing various kinds of solute were used. After annealing at 300°C, FT-IR spectrum and dielectric strength were measured for each sample. By anodizing in the electrolytes, the species originating from the ethylene glycol are incorporated into the oxide films, as well as the anions of the solute. As a consequence of the incorporation, the electrical properties of the anodic films are varied. Whereas various kinds of electrolyte were used for two kinds of Al-Nd substrates, FTIR peak position associated with Al-O stretching vibration and the dielectric strength had a certain relationship. Therefore, it is considered that the insulating property mainly depends on the microstructure of the oxide films, and that the influence of a change in the oxide film composition is very small.
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Jongduk KIM, Shojiro MIYAKE, Masahito BAN
2002 Volume 53 Issue 12 Pages
933-938
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Diamond like carbon (DLC) and silicon containing DLC (Si-DLC) films were deposited by EBEP (electron beam excited plasma)-CVD. The effects of CF
4 plasma treatment and Si-inclusion on DLC film on surface energy, nanoindentation hardness and nanoscratching properties were investigated. DLC and Si-DLC films were surface modified by CF
4 plasma treatment. CF
4 plasma treatment decreases surface energy evaluated by the liquid drop method. Si-inclusion decreases the nanoindentation hardness. CF
4 plasma treatment decreases nanoindentaion hardness of DLC film, however increases the hardness of 20% Si containing DLC film. Micro wear depth increases by Si-inclusion evaluated by nanoscratch test. CF
4 plasma treatment increases the micro wear of DLC film, however decreases the micro wear of 20% silicon containing DLC film. Friction coefficients of both DLC and Si-DLC films were decreased by CF
4 plasma treatment.
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Shojiro MIYAKE, Yukio SEKINE, Shuichi WATANABE, Naoyuki YAMAMOTO
2002 Volume 53 Issue 12 Pages
939-944
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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To improve the reliability of high-density magnetic systems, a new thin protective layer against wear and corrosion must be applied on magnetic disk media. Various low-energy beams produced from N
2, O
2, CF
4 and CH
4 plasma were irradiated onto Co-Cr-Ta magnetic media, and then the effects on hardness, corrosion resistance and magnetic coercive force were studied, and the following results were obtained. (1) To clarify the relationship between hardness and plasma state, plasma spectroscopy analysis was performed. The hardness was affected by ion and radical quantities in the plasma. (2) Various low energy beam irradiations increase the surface Vickers and nanoindentaion hardness. Especially, nitrogen and CF
4 beam irradiations increase the hardness. The modulus of dissipation in deformation energy decreases with hardness increase. (3) Various low energy beam irradiations remarkably improve corrosion resistance evaluated from natural corrosion voltage in distilled water and physiological salt water solution. (4) Proper energy beam irradiation slightly degrades the magnetic coercive force of a magnetic disk.
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Toshiya OGIWARA, Mineharu SUZUKI
2002 Volume 53 Issue 12 Pages
945-948
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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We have analyzed the interfaces in Auger depth profiles, for the Ni/Cr multilayer specimen, the GaAs/AlAs superlattice specimen and the InP/GaInAsP multilayer specimen, using curve fitting process by the logistic function. In consequence, the calculated fitted profile curves are in very good agreement with the measured points. Moreover, it has been found that the depth resolution function is expressed by two parameters of the interface-width and the asymmetry. In this report, we recommend that the surface roughening effect and atomic mixing effect are clearly shown using these two parameters.
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Akio TAKANO, Yoshikazu HOMMA, Mineharu SUZUKI
2002 Volume 53 Issue 12 Pages
949-950
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Miniaturizing an electron device, characterization of ultra shallow region and ultra thin film is becoming important, and then high depth resolution has been required of the secondary ion mass spectrometry (SIMS). A measured depth profile is generally spread rather than the actual distribution because of atomic mixing and roughness caused by ion irradiation. We need a development not only in SIMS measurement procedure but also in analysis technique to presume a true depth distribution from a measured depth profile. In this paper, we report the evaluation of the depth resolution in SIMS data for boron nitride multi-delta-doped silicon and for isotope separated silicon dioxide on natural abundance silicon dioxide using physical model and we will demonstrate to presume a true depth distribution.
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Hiroyuki SUGIMURA, Nagahiro SAITO, Yutaka KADOYA, Kazuyuki HAYASHI, Os ...
2002 Volume 53 Issue 12 Pages
951-952
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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Hideyuki OHTSUKA, Fujio ASA, Koichi KOBAYAKAWA, Yuichi SATO
2002 Volume 53 Issue 12 Pages
953-954
Published: December 01, 2002
Released on J-STAGE: October 30, 2009
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