Journal of The Surface Finishing Society of Japan
Online ISSN : 1884-3409
Print ISSN : 0915-1869
ISSN-L : 0915-1869
Volume 56, Issue 5
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  • Akinari KUROKAWA, Tetsuo SAKKA, Yukio H. OGATA
    2005Volume 56Issue 5 Pages 281
    Published: 2005
    Released on J-STAGE: November 28, 2005
    JOURNAL FREE ACCESS
    We reported laser-assisted maskless metal patterning on p-type silicon previously. The process uses photo-excited electrons, and therefore it is applicable only to p-type silicon, because the n-type has abundant free electrons, and selective metal deposition cannot be expected. In the present work, we studied the possibility of achieving the metal patterning on n-type silicon. Various noble metals can be deposited on silicon by immersion plating. In the immersion plating of copper, deposition is observed on a porous silicon surface, but not on a flat silicon surface. Porous silicon is formed by silicon anodization. The reaction requires holes, and n-type silicon lacks enough holes to promote the dissolution reaction. When the surface is locally illuminated by a laser, the photo-excited area can be locally anodized, and a porous silicon pattern can be formed in n-type silicon without a mask. Using the above, copper deposition dependent upon the surface state and porous silicon patterning on the surface, we succeeded in patterning copper on n-type silicon without using a mask.
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