Journal of The Surface Finishing Society of Japan
Online ISSN : 1884-3409
Print ISSN : 0915-1869
ISSN-L : 0915-1869
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Volume 57, Issue 9
Displaying 1-8 of 8 articles from this issue
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Research Papers
  • Pretreatment of Nickel Plating on ASA Resin Using Ozonated Water as Replacement for Chromic Acid Etching
    Takeshi BESSHO, Fumitaka YOSHINAGA, Kotoku INOUE, Ichiro KOIWA, Hideo ...
    2006 Volume 57 Issue 9 Pages 659
    Published: 2006
    Released on J-STAGE: March 23, 2007
    DOIhttps://doi.org/10.4139/sfj.57.659
    JOURNAL FREE ACCESS
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    In view of environmental concerns, ozonated water treatment was studied as a replacement for conventional chromic acid etching of plating on ASA Resin.
    Ozonated water treatment achieves favorable adhesion without roughening the plastic's surface. Chemical analysis and cross-sectional observations show the formation of polar groups on the surface of the treated resin. Catalytic palladium particles are dispersed and adsorbed into the treated resin surface layer after the catalyzing step. Nickel ions penetrate and scatter into the treated resin layer during electroless nickel plating. These observations prove that favorable adhesion can be attributed to the formation of a nanoscale reformed layer, which is completely different from the conventional anchor effect produced using chromic acid etching.
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  • Growth and Optical Property of GaSe Thin Film on Silica Glass Fabricated by Electron Beam Deposition
    Masanori OHYAMA, Hiroshi ITO, Yuki SATO, Manabu TAKEUCHI
    2006 Volume 57 Issue 9 Pages 664
    Published: 2006
    Released on J-STAGE: March 23, 2007
    DOIhttps://doi.org/10.4139/sfj.57.664
    JOURNAL FREE ACCESS
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    Gallium selenide (GaSe) films, a layered semiconductor, were prepared on silica glass substrates by electron beam deposition at various substrate temperatures (Ts=R. T. ~500ºC). The structure, growth and optical properties of the GaSe films were studied. The unit layer of GaSe films was grown toward the two directions on silica. It is revealed that the GaSe films deposited at R. T. ~300ºC have amorphous structures, while those at 500ºC have a polycrystalline structure with their c-axis perpendicular to the substrate plane. Also it was found that the crystalline structure of the film grown at 400ºC is remarkably changed to become a c-axis parallel to the substrate plane and porous thin film. Furthermore, it was shown that the c-axis orientation of GaSe films could be controlled by the substrate temperature. The absorption edges of the GaSe films deposited at 500ºC showed a direct allowed transition with an optical gap of Eg=2.0eV, which was in good agreement with those measured in single crystal GaSe.
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  • Gold-Silver Alloy Nanowires Electrochemically Grown in the Nanopores of Aluminum Anodic Oxidation Film from Cyanide-Free Bath and Their Color Properties
    Akihito YASUI, Toshikazu KANOH, Mitsunobu IWASAKI, Tetsuro KAWAHARA, S ...
    2006 Volume 57 Issue 9 Pages 670
    Published: 2006
    Released on J-STAGE: March 23, 2007
    DOIhttps://doi.org/10.4139/sfj.57.670
    JOURNAL FREE ACCESS
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    AuAg alloy nanowires in the geometrically anisotropic pores of the aluminum anodic oxidation films with a mean diameter of 10nm and depth of 10μm were successfully prepared by the electrodeposition of gold and silver under the bath voltage of 6V AC in a cyanide-free bath (Ag2SO4-HAuBr4-(NH4)2S2O3). The aspect ratio of the alloy nanowires was controlled by changing the electrodeposition time. The maximum position of absorption band due to the transverse surface plasmon resonances of AuAg alloy nanowires shifts to a longer wavelength with an increase of the composition of Au. The color and shading of the anodized aluminum deposited with alloy nanowires were simply tuned in a wide range.
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