Ta
2O
5 thin films were deposited under various sputtering conditions onto glass plates by RF magnetron sputtering apparatus. Sputtering conditions were directed by changing the RF power, O
2 partial pressure and substrate-target distance. The effects of these sputtering conditions on the deposition rate and transmittance of films were investigated. Furthermore, the crystallinity and the ratio of oxygen to tantalum (O/Ta) of the films were investigated.
The results showed that the deposition rate was affected by RF power, O
2 partial pressure and substrate-target distance. On the other hand, the transmittance of films was only affected by O
2 partial pressure, and the transmittance of the films which deposited at 0% O
2 partial pressure was lower than that of the others in the short wave length area. O
2 partial pressure was not found to effect the crystallinity of films, and the films which deposited at any O
2 partial pressure were amorphous in structure. However, the ratio of oxygen to tantalum of films which deposited at 0% O
2 partial pressure was smaller than that of films which deposited at the other O
2 partial pressure.
View full abstract