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Online ISSN : 1884-5495
Print ISSN : 0371-5345
ISSN-L : 0371-5345
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2023 巻, 304 号
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  • 半導体製造における黒鉛材料
    田尾 理恵
    2023 年 2023 巻 304 号 p. 81-87
    発行日: 2023/06/30
    公開日: 2023/06/30
    DOIhttps://doi.org/10.7209/tanso.2023.81
    ジャーナル 認証あり
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    At a time of semiconductor shortage in the world, the use of SiC power semiconductors is expected to grow significantly. These power semiconductors require graphite materials for their manufacture. This review summarizes the requirements for graphite, and its necessity in the process of manufacturing power semiconductors. The problems of single crystal and epitaxial growth technologies in silicon and SiC power semiconductors impose strict requirements on the graphite materials. 12-inch silicon wafers for large-scale integration (LSI) and power require crystals with low oxygen concentrations. Using the Czochralski method with an applied magnetic field and a graphite susceptor, high-quality SiC wafers can be produced. The uniform epitaxial growth of the wafers requires a susceptor made from a pure graphite material covered with a polycrystalline silicon carbide coating, and the graphite must be isotropic and have the same thermal expansion coefficient as the SiC. The products made using graphite materials are evolving in response to advanced user demands.

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