Crystallization of the amorphous Se film deposited on Al drum is accelerated by Al diffusion into Se film. The crystallization near the interface has been observed by TEM and Raman spectroscopy. The diffusion process through the interface has been studied by SIMS.
The annealing temperatures, even below 343 K, causes the diffusion of Al into Se film and results the crystallization near the Se/Al interface. Any crystallization, on the other hand, has not been observed at other interfaces of Se/Au and Se/glass. The difference in electronegativity between Al and Se suggests that the Al atom in Se behaves as a cation. The diffusion coefficients at 298 K and 323 K are estimated to be 1.7×10^-14 and 4.6×10^-13 (cm²/sec), respectively. The values are extremely larger than those of crystalline materials.
These results suggest that the Al ions can easily diffuse into amorphous Se film and act as nuclei in the crystallization procedure.

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In order to reduce the residual potential of Se-Te alloy, we clarified the effect of antimony and halogens on electrophotographic properties of Se-Te alloy. It was found that Se-Te (13wt. %) alloy doped with antimony (1wt. %) and chlorine (20ppm) had sufficientry low residual potential and they had enough dark residual potential. It was also found that the addition of antimony improved the thermal stability of Se-Te alloy.

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The authors have reported in the previous paper about some investigation on displaying electrical charge and/or potential distribution on an insulating surface. In the present article additional results are given using an improved system.
A corona charged test plate is set on a turning table which has a constant rotating rate. (In the former experiment the rotating rate is P. L. L. controlled.) A probe head for detecting charge located above this sample is scanned, and the signal picked up with the probe is amplified by a charge sentitive amplifier followed by an A/D converter, though the I/O port, the digitized signal is fed to a 16 bit microcomputer which has a memory device capable of storing data prior to precessing it. The limitation in data memory of the former apparatus (an 8 bit microcomputer is used) can be improved by extending the memory capability. After the image data is processed the image is displayed on a color CRT screen in a form of color shade. In this apparatus the relative speed between the probe head and the sample decreases as it traverse toward the center of the table by the auxiliary scanning. To avoid image distorition arising from this speed variation, the sampling rate of data is program controlled.
Moreover the relation between probe scanning and corresponding data display is analysed closely so that the codition needed for minimaizing image distortion is clarified.

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Practical upper limit of toner concentration of two-compornent developer has been deter-mined by considering carrier coverage condition. An exact formula for the carrier coverage has been derived too. Determination of the practical upper limit of the toner concentration is made possible by mixing different type of toner as a tracer into the developer and observing charge polarity change of the mixed toner. The obtained practical upper limit of the toner concentration agrees well with the toner concentration at which half of the total surface area of toner particles is equal to the carrier surface area.

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The enhancement of hole drift mobility in poly-N-vinylcarbazole (PVK) by adding a kind of pyrazoline derivatives was investivated using a series of pyrazolines having an intermediate trap level between the hole conduction state and deep trap level of PVK. For the effective enhancement of drift mobility an appropriate intermediate level provided by the dopant was found to be required, and the previously proposed mechanism of two-step detrapping from the deep trap to the conduction state of PVK via pyrazoline derivatives was confirmed successfully by changing additive level of the dopants. In the case of being deeper for the trap level of the dopant, the carrier transport due to the hopping conduction through the dopant molecules was shown to become predominant.

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Electric properties and photovoltaic effects in vacuum were investigated on the evaporated Ⅲb metal phthalocyanine thin films. The Ⅲb metals have been used such as Aluminum, Gallium and Indium, The dark-conductivity and photo-conductivity up to the middle electric field show the ohmic conduction after the correction with the value of photovoltages. The activation energies calculated from the plot of Log lp vs. 1/T are between 0.06 and 0.1 eV. The photovoltages of AlClPc, GaClPc and InClPc under Xenon lamp are 364.279 and 154 mV, respectively.
When the incident irradiation was directed through the transparent NESA electrode, photovoltaic action spectrum of GaClPc matches the absorption spectrum, and spectral peakes of InClPc correspond to the absorption bottom, GaClPc and InClPc are estimated to be p-type and n-type semiconductors, respectively.

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The sensitivity of photoreceptors for electrophotography was evaluated from the practical standpoint. Half decay exposure as conventional expression of sensitivity did not necessarily correspond to the actual sensitivity in copy machine. The sensitivity measurement in agreement with the pactical electrophotography system had three features. (1) Light intensity was changed with constant period of exposure. (2) Light-decayed potential was measured in conformity with the process time between exposure and development. (3) Illumination through 485∼600 nm band pass filter. Under these conditions, it was found that the organic photoreceptor used middle speed copy machine (about 30 copies per minute) was more sensitive than Se-Te photoreceptor.

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