To investigate the effect of interfacial energy on the epitaxial growth of LiNbO
3, liNbO
3, was deposited on the (001) α-Al
2O
3 by a rf magnetron sputtering using pressed powder targets to decrease the deposition rate. Below the substrate temperature of 650°C, only the LiNb
3O
8 (-602) layer grew epitaxially at the same deposition conditions as the LiNbO
3 (012) growing epitaxially on the α-Al
2O
3 (012) single crystal substrate. The reason is that the interfacial energy at the LiNb
3O
9, (-602)/ α-Al
2O
3 (001) interface is smaller than that at the LiNbO
3 (001) / α-Al
2O
3 (001) interface. Therefore, even under the conditions to deposit films with the higher Li concentration by increasing the Li/Nb ratio in the targets, the LiNbO
3 layer did not grow, but the LiNb
3O
8 (-602) epitaxial layer grew. However, above the substrate temperature of 700°C, a mixtured layer of LiNbO
3 and LiNb
3O
8 grew. By using the target with the highest Li/ Nb ratio (3/1), the epitaxial layer of LiNbO
3(001) grew, though contained the thin mixtured layer of LiNbO
3 and LilNb
3O
8 polycrystallines at the surface. The polycrystalline layer transformed to the epitaxial LiNbO
3 layer by annealing at 800°C in the oxygen gas atmosphere.
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