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Volume 49, Issue 1
Displaying 1-5 of 5 articles from this issue
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REVIEWS
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Reiko SAITO, Masahiro KUDO2001 Volume 49 Issue 1 Pages 1-9
Published: 2001
Released on J-STAGE: October 16, 2007
JOURNAL FREE ACCESSThe principle and apparatus of the static-SIMS are described with their applications for industrial characterization. Static-SIMS (S-SIMS), which is one of the surface sensitive techniques, has been used mainly to analyze organic surfaces. Recent developments in comprehension on the interaction between ions and solids, and remarkable progresses in apparatus have made its extensive application possible. Especially striking developments in TOF-SIMS are overcoming such usual weak points of S-SIMS as insufficiency of sensitivity or spatial resolution. In semiconductor manufacturing processes, as the performance of electronic devices becomes higher, the evaluation methods are required to have much higher sensitivity, accuracy and give more information. S-SIMS, with development of TOF-SIMS, could evaluate a trace surface contamination or a slight difference in the chemical structure of the surfaces with high sensitivity and accuracy, and it is considered to be quite useful for improvement of the semiconductor manufacturing processes.View full abstractDownload PDF (927K) -
Electron Tunneling Model and Bond Breaking ModelTakanori KOSHIKAWA, Tsuneo YASUE, Takeshi KAN2001 Volume 49 Issue 1 Pages 10-15
Published: 2001
Released on J-STAGE: October 16, 2007
JOURNAL FREE ACCESSSecondary ion emission phenomena are reviewed by the electron tunneling and the bond breaking model, which are mainly based on the results of Yu's group. The electron tunneling model can apply to the non-localized materials such as metals. The alkali metals are typical examples which can be applied this electron tunneling model. The bond breaking model can be applied to ionic and covalent bond materials. Oxidized materials are typical examples. Here, the outline of the electron tunneling and the bond breaking model will be explained and some typical experimental results will be shown. Although the experimental results of the alkali on Si(100) which were obtained by the author's group can be explained by the above mentioned electron tunneling model, however, this simple model cannot apply to the alkali on Si(111) system. This might be due to the localized potential effect which was already studied in the filed of low energy ion scattering.View full abstractDownload PDF (658K)
INTEGRATED PAPER
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Yoshikazu HOMMA, Satoru KUROSAWA2001 Volume 49 Issue 1 Pages 16-20
Published: 2001
Released on J-STAGE: October 16, 2007
JOURNAL FREE ACCESSQuantitative analyses based on reference materials in secondary ion mass spectrometry (SIMS) are reviewed from a statistical viewpoint. The accuracy and precision of quantitative values are examined through three round-robin studies using uniformly doped GaAs specimens. The current SIMS accuracy (reproducibility) deviation of ±30% depends on the accuracy of reference materials. The accuracy deviation is reduced to ~10% when common reference materials are used. The precision (repeatability) deviation is estimated to be 3-5%. Relative ion intensity, which is the ratio of the analyte signal to the matrix signal, depends on instrument type (mainly on the impact angle of primary ions), and its variation among the same type of instruments is smaller than that among different types. Using calibration parameter data, semi-quantitative analysis with ±50% deviation is possible.View full abstractDownload PDF (569K)
REGULAR PAPER
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Naoaki SAITO, Kazuyoshi KOYAMA, Mitsumori TANIMOTO2001 Volume 49 Issue 1 Pages 21-25
Published: 2001
Released on J-STAGE: October 16, 2007
JOURNAL FREE ACCESSA pulsed acceleration method is widely adopted in a conventional time-of-flight (TOF) mass spectrometry of ions. We discuss the influence of the deviation of the pulse shape from an ideal step-function on the TOF measurement; a finite rise-time and an overshooting oscillation. To attain a high mass resolution and a wide mass range simultaneously, we have developed high-voltage pulsers, which generate high voltage pulses up to ±25kV with a rise time of 90 ns. We have succeeded in the measurement of the mass spectra of positive and negative ion transition metal clusters with a wide mass range about 100,000 u and a high mass resolution up to 3,000.View full abstractDownload PDF (502K)
REVIEW
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Toyofumi NAKANISHI2001 Volume 49 Issue 1 Pages 26-29
Published: 2001
Released on J-STAGE: October 16, 2007
JOURNAL FREE ACCESSWe have been applied current MS techniques to detect and characterize aberrant proteins and to determine modified proteins from 1994. Two simple methods were devised to prepare proteins in these projects. One was immunoprecipitation with antisera against target protein, followed by LC-ESIMS and the other was 2-dimensional LC connected to ESIMS. Using these procedures, we detected more than 40 cases (10 different types) of transthyretins (TTRs), 5 cases (5 different types) of Cu/Zn superoxide dismutases and 60 cases (29 different types) of hemoglobins (Hbs) for 8 years. TTR has several isoforms in serum, most of which are caused by disulfide linkage with cysteine residue at position 10. We found an ion peak 80 Da larger than unmodified TTR by MS, assigned it to S-sulfonated TTR and the modified TTR can be used as a diagnostic marker for molybdenum cofactor deficiency. We also measured glycated β-globin N-terminus hexapeptide (HbAlc) by immobilized endoproteinase Glu-C digestion and measured these digests by LC-ESIMS technique, proposed by Kobold et al. and calculated the values of HbA1c by weighted sum of singly and doubly charged ions of these hexapeptides. Finally we describe identifications of Burkitt lymphoma BL60 cell line proteins catalogues by radical-free/high reduction two-dimensional gel electrophoretically separation and a high sensitive nanoflow-electrospray ion trap mass spectrometry.View full abstractDownload PDF (342K)
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