A trial of the carrier doping into (Sr, Ba)
2Cu
3O
4(Cl, Br)
2 with the Cu
3O
4 plane, which is composed of Cu(1)O
2 and extra Cu(2) sublattices, has been carried out through the partial substitution. We have succeeded in obtaining single-phase samples of Ba
2Cu
3-xLi
xO
4Cl
2(0≤x≤1.0). With increasing x, the α-axis tends to decrease and the c-axis is almost constant. All samples exhibit semiconductive behavior. The electrical resistivity decreases with increasing x up to 0.5 and tends to increase slightly for x>0.5 due to disorder in the Cu
3O
4 plane through the substitution of Li
+ for Cu
2+. Both of the antiferromagnetic transition temperatures with respect to Cu (1) and Cu (2) decrease with increasing x. However, the antiferromagnetic ordering in the Cu(1)O
2 sublattice still remains even for x=0.5. Considering that the formal valence of Cu is + 2.2 for x=0.5, holes doped through the Li-substitution maybe localized in the Cu(2) site. We will also discuss the possibility of the appearance of the superconductivity in the present system with the Cu
3O
4 plane.
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