Cupric-oxide-based thin films with various amounts of 0, 1, 2, 3, and 4 wt.% Ni doping were, in turn, deposited on ITO/glass substrates via a solution process. The 0.25 M concentrated solutions of copper (II) acetate monohydrate and nickel acetate tetrahydrate were used as starting materials mixed in ethanol solvent, in order to form the precursors. We obtained that the crystalline structure was not affected by the increase in Ni doping concentration as evidenced by X-ray diffraction patterns. The surface morphology observed by scanning electron microscope pointed out the presence of linked-structure nanoparticles. The influence of Ni doping on the optical bandgap width was evaluated by using ultraviolet-visible spectrometry. We found that the optical bandgap should be direct, and it decreased from 2.69 to 2.38 eV for the range doped. Interestingly, we determined the relaxation time of the Ni-doped CuO/ITO/glass structure from measuring the electrochemical impedance spectroscopy, and it was 0.36 s for the undoped film, then gradually decreased to be 0.31, 0.11, 0.1, and 0.04 s with increasing the Ni doping concentration. This achievement result will serve as a foundation for the future photonic researches.
Fig. 5 Nyquist plot (a) and variation in the resistive part
Z′ with frequency (b) for the undoped and the Ni-doped CuO thin films.
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