To expand the applicability of ion beam lithography by using highly charge ions, Ar
1+ and Ar
9+ ions, whose energy was 90keV, were irradiated onto spin-on-glass (SOG) through a stencil mask. The fluencies of Ar ions were 1.6×10
12 and 3.1×10
12 atoms/cm
2. The step structure was fabricated on SOG by the chemical etching after the irradiation with Ar
9+ as well as Ar
1+. The fluence and etching time dependencies of the etching depth has been observed. The step structure, whose depth is deeper than that at the beam center, was observed at the surrounding region. It is suggested from this result that the etching rate would be enhanced at fluence of Ar ions n < 1.6×10
12 atoms/cm
2.
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