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Volume 39 (2017)
- Issue 6 Pages 310-
- Issue 5 Pages 262-
- Issue 4 Pages 158-
- Issue 3 Pages 90-
- Issue 2 Pages 50-
- Issue 1 Pages 2-
Volume 39, Issue 3
Deterioration Diagnosis and Maintenance Techniques in IoT Era
Displaying 1-7 of 7 articles from this issue
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Atsushi IWASAKI2017 Volume 39 Issue 3 Pages 90-95
Published: 2017
Released on J-STAGE: October 01, 2019
JOURNAL FREE ACCESS -
Lu JIN2017 Volume 39 Issue 3 Pages 96-103
Published: 2017
Released on J-STAGE: October 01, 2019
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Watalu YAMAMOTO2017 Volume 39 Issue 3 Pages 104-109
Published: 2017
Released on J-STAGE: October 01, 2019
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- Analysis by Markov Decision Process -Nobuyuki TAMURA2017 Volume 39 Issue 3 Pages 110-117
Published: 2017
Released on J-STAGE: October 01, 2019
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Yuichi TOKUNAGA, Koki YOSHIMOTO, Toshiyuki KURIYAMA2017 Volume 39 Issue 3 Pages 118-125
Published: 2017
Released on J-STAGE: October 01, 2019
JOURNAL FREE ACCESS -
Masashi MIWA2017 Volume 39 Issue 3 Pages 126-132
Published: 2017
Released on J-STAGE: October 01, 2019
JOURNAL FREE ACCESS -
Yusuke WADA, Yan WU, Yoshihiro TAKAHASHI2017 Volume 39 Issue 3 Pages 145-153
Published: 2017
Released on J-STAGE: October 01, 2019
JOURNAL FREE ACCESSSuppression of heavy-ion induced parasitic bipolar effects and SET （Single Event Transient） pulses from SOI-MOSFETs and SOI-CMOS inverters in which SiGe materials were applied for source/drain have been investigated using device simulation. The parasitic bipolar effects could be suppressed by applying SiGe with Ge concentration of 20% or more for source/drain under constant voltage. The duration of SET pulse from SOI-CMOS inverters could be also reduced by applying SiGe. It was confirmed that the duration is determined by the time for expending of accumulated charges in body region of irradiated MOSFET by the driving current of opposite type of MOSFET．lView full abstractDownload PDF (9363K)
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