In order to study hydrogen-defect interactions, the effects of ion irradiation and annealing on the lattice location of hydrogen dissolved in Nb, NbH
0.023, have been investigated at room temperature by the channelling method utilizing a nuclear reaction
1H(
11B,α)αα with a 2 MeV
11B
+ beam. By irradiation at room temperature with a dose of about 1.4 × 10
16/cm
2 of about 2 MeV
11B ions, the lattice location changes from the original tetrahedral (
T) site (
T-1 state) to the
Ttr site, which is displaced from a
T site by 0.45–0.55 Å towards its nearest neighbour lattice point. The
Ttr-site occupancy remains the same even for an approximately three times higher irradiation dose. On subsequent annealing at 523 K for 1 h, the site occupancy changes to the occupancy of (55–70)% of H atoms at
T sites (
T-2 state) and (30–45)% of them at random (
R) sites. By additional irradiation with a dose of about 1.4 × 10
16/cm
2 at room temperature subsequent to the annealing, the site occupancy changes to the occupancy of (35–50)% at
T + (50–65)% at
R or (30–40)% at
T + (10–20)% at
Ttr + (50–60)% at
R. It is concluded that the irradiation-induced site change to the
Ttr site is a result of the trapping of hydrogen by monovacancies,
i.e., the formation of H-vac. complex-1. Most of the H atoms in the
T-2 state are not free hydrogen, but associated with more vacancies, for which hydrogen located at a
T site in a tetrahedron consisting of four vacancies (tetravacancy),
i.e., H-4vac. complex-2, is proposed. The
R-site occupancy corresponds to hydrogen in a H-associated larger vacancy cluster complex-3. It is demonstrated that the complex-1 does not act as a nucleus, whereas the complex-2 acts as a nucleus for the growth to the H-associated larger vacancy cluster complex-3 by trapping more irradiation-introduced vacancies at room temperature.
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