[in Japanese]

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[in Japanese]

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[in Japanese]

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An Evaluation of LB resists for Excimer Laser (EX), and X-ray exposure was conducted to realize half micron lithography. The study included five LB reagents for EX exposure, i. e., wtricocynoic acid : TCA, octadecyl-acrylic acid : ODA, and three Diynoic acid derivatives (i. e., Tricosa-diynoic acid : TDA, pentacosa-diynoic acid : PDA, and heptacosa-diynoic acid : HDA), and three LB reagents for X-ray exposure, i. e., TCA, TSA, and ADA. Using PDA LB films, 0.3μm patterns could be fabricated by EX exposure, the size of which is the theoretical resolution limit of our lens. Using TCA LB films, 0.4 μm patterns can be fabricated by X-ray exposure. This size is at the small size limit of the X-ray mask. In order to actually utilize LB films as resits, further improvements in production efficiency are required.

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A new time base correction method with a burst-injection oscillator based a feed forward control which provides high-precision, high-stability and quick-response time base correction has been proposed by the authors. This is especially suitable for high-definition VTR using an analog segment recording method. In this paper, a linear model in used from the viewpoint of the fundamental frequency component in order to analyse the phase response of the injection oscillator showing a non-linear property. With this model, the correlation between the quality factor of the oscillator and the transient phase responses by the intermittent injection signal, and the influence of the random noise on system behavior have been examined by using both computer simulation and practical experiment. As a result, with optimization of the oscillator's quality factor and a constant phase controlled PLL, it is confirmed that the phase offset becomes less than 5 ns, within a burst period of 1μm and the jitter caused by random noise is reduced to less than 5 ns even with a video signal to noise ratio of 25 dB.

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